Structuring effect of heteroepitaxial CdHgTe/CdZnTe systems under irradiation with silver ions

Sizov, Fiodor F.; Savkina, R. K.; Smirnov, A. B.; Udovytska, R. S.; Kladko, V. P.; Gudymenko, A. I.; Safryuk, N. V.; Lytvyn, O. S.

doi:10.1134/s1063783414110286

Cited by 8 publications

(7 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The deformation sign is dependent on the ratio of ionic radii r + of the matrix atoms and introduced impurity [ 21 ]. Implantation with ions of small radius (such as B + , r B ~ 0.97 Ǻ) stimulates the compression of the damaged layer, whereas the implantation with ions of radius comparable with that of Hg (in our case, these are Ag + ions, r Ag ~ 1.44 Ǻ, r Hg ~ 1.55 Ǻ) gives rise to tensile stress in the damaged layer, as confirmed by the X-ray diffraction data obtained in this work and in our previous work [ 23 , 34 ]. The calculated mechanical stress is σ Ag = 2.2 × 10 5 Pa (strain ε ~ 10 −6 ) and σ B = 1.4 × 10 3 Pa (strain ε ~ 10 −8 ) [ 25 ].…”

Section: Discussionsupporting

confidence: 90%

Ion Beam Nanostructuring of HgCdTe Ternary Compound

et al. 2017

View full text Add to dashboard Cite

Systematic study of mercury cadmium telluride thin films subjected to the ion beam bombardment was carried out. The evolution of surface morphology of (111) Hg1 − xCdxTe (x ~ 0.223) epilayers due to 100 keV B+ and Ag+ ion irradiation was studied by AFM and SEM methods. X-ray photoelectron spectroscopy and X-ray diffraction methods were used for the investigation of the chemical compound and structural properties of the surface and subsurface region. It was found that in the range of nanoscale, arrays of holes and mounds on Hg0.777Cd0.223Te (111) surface as well as the polycrystalline Hg1 − xCdxTe cubic phase with alternative compound (x ~ 0.20) have been fabricated using 100 keV ion beam irradiation of the basic material. Charge transport investigation with non-stationary impedance spectroscopy method has shown that boron-implanted structures are characterized by capacity-type impedance whereas for silver-implanted structures, an inductive-type impedance (or “negative capacitance”) is observed. A hybrid system, which integrates the nanostructured ternary compound (HgCdTe) with metal-oxide (Ag2O) inclusions, was fabricated by Ag+ ion bombardment. The sensitivity of such metal-oxide-semiconductor hybrid structure for sub-THz radiation was detected with NEP ~ 4.5 × 10−8 W/Hz1/2at ν ≈ 140 GHz and 296 K without amplification.

show abstract

Section: Discussionsupporting

confidence: 90%

Ion Beam Nanostructuring of HgCdTe Ternary Compound

et al. 2017

View full text Add to dashboard Cite

show abstract

“…The surface becomes enriched with heavier components of the Cd-HgTe solid solution such as Hg. This scenario agrees with the results of a X-ray diffraction analysis of Cd-HgTe films with the composition = 0.23 irradiated by 100-keV silver ions [18], which proved the formation of a CdHgTe polycrystalline layer with = 0.2 on the surface.…”

Section: Discussionsupporting

confidence: 90%

“…The difference between the effects that arise in the near-surface layer of a CdHgTe epitaxial film after its treatment with boron or silver ions stems from the opposite character of deformations generated by the ions in the crystal lattice of the semiconductor. In particular, the stretching deformations in the near-surface region of the -CdHgTe epitaxial film and the compression of deeper layers stimulate the "withdrawal" of silver ions to the surface and the formation of the Ag 2 O compound in the nearsurface layer of the matrix (in accordance to data of the X-ray diffraction analysis reported in work [18]). The propensity of silver to create solid solutions in -CdHgTe at the ionic implantation becomes a crucial factor.…”

Section: Discussionsupporting

confidence: 84%

“…At the same time, the morphology and the structuring kinetics are dependent on the angle, at which the ionic flux interacts with the target surface. In our previous works [16][17][18], it was established that the irradiation of CdHgTe films by silver ions resulted in the nanostructuring of their surface and the formation of Ag 2 O in the matrix. This work is aimed at studying the character of changes in the structural properties of the narrow-gap semiconductor compound CdHgTe induced by a variation of the ionic irradiation angle and at analyzing a possibility of the controllable formation of the Ag 2 O--CdHgTe heterostructure on the surface.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Study of the Morphology of p-CdHgTe Layers Structured by Grazing Silver-Ion Beam Irradiation

et al. 2015

View full text Add to dashboard Cite

The "top-down" process of deposition of nanostructured layers on the surface of semiconductor materials by the ion implantation is studied. The irradiation of-Cd Hg1− Te (= 0.223)/CdZnTe heterostructures with 100-keV silver ions induces the formation of a nanostructure array on the specimen surface. The reduction of the ion beam incidence angle to 40 ∘ stimulates an ordering of nanostructures. The stabilization of the implantation-activated state of the system gives rise to the formation of the multifunctional metal oxide-semiconductor system Ag2O-Cd Hg1− Te (= 0.2). The latter is a size-dependent response to the grazing beam irradiation and allows the combination of the functional properties of Ag2O oxide (= 1.41 eV) and CdHgTe semiconductor (= 0.123 eV) to be used as a basis for the creation of optical transducers and microwave grid arrays. K e y w o r d s: nanostructured layer, CdHgTe semiconductor, method of ion implantation.

show abstract

“…Note that the intrinsic defects, as well as ions, being introduced in MCT, demonstrate high diffusion ability. Taking into account that mercury is driven by the vacancy mechanism, whereas silver, for which ln D 0 = f (E act ), E act = 0.6 eV is the activation energy [15], moves by the dissociative mechanism, the migration of Hg i was found to be the dominating process in MCT [16]. The extension regions formed upon silver implantation into MCT shift the reaction to the left, and the compression of deeper layers of the loosened epitaxial film prevent the mercury diffusion into the target depth.…”

Section: Figurementioning

confidence: 99%

Nano‐scale pattern formation on the surface of HgCdTe produced by ion bombardment

Smirnov

Gudymenko

Kladko

et al. 2015

Phys. Status Solidi C

Self Cite

View full text Add to dashboard Cite

Presented in this work are the results concerning formation of nano‐scale patterns on the surface of a ternary compound Hg1–xCdxTe (x ∼ 0.223). Modification of this ternary chalcogenide semiconductor compound was performed using the method of oblique‐incidence ion bombardment with silver ions, which was followed by low‐temperature treatment. The energy and dose of implanted ions were 140 keV and 4.8×1013 cm‐2, respectively. Atomic force microscopy methods were used for the surface topography characterization. The structural properties of MCT‐based structure was analyzed using double and triple crystal X‐ray diffraction to monitor the disorder and strain of the implanted region as a function of processing conditions. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Structuring effect of heteroepitaxial CdHgTe/CdZnTe systems under irradiation with silver ions

Cited by 8 publications

References 17 publications

Ion Beam Nanostructuring of HgCdTe Ternary Compound

Ion Beam Nanostructuring of HgCdTe Ternary Compound

Study of the Morphology of p-CdHgTe Layers Structured by Grazing Silver-Ion Beam Irradiation

Nano‐scale pattern formation on the surface of HgCdTe produced by ion bombardment

Contact Info

Product

Resources

About