Dependence of the InAs size distribution on the stacked layer number for vertically stacked InAs/GaAs quantum dots

1.32 μm InAs/InGaAs/GaAs quantum dot lasers operating at room temperature with low threshold current density

“…In addition the normalized GS saturation intensity relative to a single layer increases with increasing the number of stacked layers confirming the AFM observation. This effect is different to the one observed in ref 12 in which the QDs density decreases when increasing the stacking layer number. In addition the FWHM increases slightly for the three samples from 24 meV to 28 meV in comparison with the active region containing one layer of QD which indicates that only a small dot size dispersion is introduced by the stacking procedure.…”

Long wavelength vertically stacked InAs/GaAs(001) quantum dots with a bimodal size distribution: Optical properties and electronic coupling

“…The increase of the high energy side asymmetrical broadening with increasing the excitation power can be correlated with the vertical electronic coupling of the large QDs within the stack [11]. So, as a consequence of the buildup of the strain field along the dot stack, the QD size increases with increasing the stacked layer number [12][13][14]. Furthermore, the strengthening of the vertical electronic coupling caused by the wave functions overlap allow carriers, captured by a dot in a given column, to migrate along the column, eventually becoming localized in the dot with the lowest ground state energy before recombining radiatively.…”

Structural and photoluminescence characteristics of molecular beam epitaxy-grown vertically aligned In0.33Ga0.67As/GaAs quantum dots

“…Recently, it has been found that by vertically stacking these dots, their distribution and mean size can be controlled [7]. Vertical ordering of QDs has been extensively studied in the InGaAs/GaAs [8,9] system.…”