Demonstration of p-type 3C–SiC grown on 150mm Si(100) substrates by atomic-layer epitaxy at 1000°C

Wang, Li; Dimitrijev, Sima; Han, Jisheng; Tanner, Philip; Iacopi, Alan; Hold, Leonie

doi:10.1016/j.jcrysgro.2011.06.041

Cited by 61 publications

(44 citation statements)

References 24 publications

(30 reference statements)

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“…1 It has been reported that lateral power transistors manufactured from 3C-SiC could be suitable for the 1200-V range, and are an alternative to gallium nitride (GaN) heterojunction transistors for typical power applications in which normally-off operation is required. 2 Devices with these voltage ratings could be used in automotive and other domestic appliances and hence have huge potential for reducing the global carbon emissions.…”

Section: Introductionmentioning

confidence: 99%

High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

Sharma

Jennings

et al. 2015

Journal of Elec Materi

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In a novel approach, high temperatures (1200-1400°C) were used to oxidize cubic silicon carbide (3C-SiC) grown on silicon substrate. High-temperature oxidation does not significantly affect 3C-SiC doping concentration, 3C-SiC structural composition, or the final morphology of the SiO 2 layer, which remains unaffected even at 1400°C (the melting point of silicon is 1414°C). Metal-oxide-semiconductor capacitors (MOS-C) and lateral channel metaloxide-semiconductor field-effect-transistors (MOSFET) were fabricated by use of the high-temperature oxidation process to study 3C-SiC/SiO 2 interfaces. Unlike 4H-SiC MOSFET, there is no extra benefit of increasing the oxidation temperature from 1200°C to 1400°C. All the MOSFET resulted in a maximum field-effect mobility of approximately 70 cm 2 /V s.

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Section: Introductionmentioning

confidence: 99%

High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

Sharma

Jennings

et al. 2015

Journal of Elec Materi

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“…The growth process of the SiC lm can be found elsewhere, 23 in which low pressure chemical vapor deposition was utilized to epitaxially deposit SiC on a 6-inch Si wafer (p-type with a carrier concentration of 10 14 cm À3 ). The crystal quality and surface roughness of the SiC lms were reported in our previous studies.…”

Section: Resultsmentioning

confidence: 99%

Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures

et al. 2018

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a This paper reports on the piezoresistive effect in p-type 3C-SiC thin film mechanical sensing at cryogenic conditions. Nanothin 3C-SiC films with a carrier concentration of 2 Â 10 19 cm À3 were epitaxially grown on a Si substrate using the LPCVD process, followed by photolithography and UV laser engraving processes to form SiC-on-Si pressure sensors. The magnitude of the piezoresistive effect was measured by monitoring the change of the SiC conductance subjected to pressurizing/depressurizing cycles at different temperatures. Experimental results showed a relatively stable piezoresistive effect in the highly doped 3C-SiC film with the gauge factor slightly increased by 20% at 150 K with respect to that at room temperature. The data was also in good agreement with theoretical analysis obtained based on the charge transfer phenomenon. This finding demonstrates the potential of 3C-SiC for MEMS sensors used in a large range of temperatures from cryogenic to high temperatures.

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“…A layer of n-type 3C-SiC with the thickness of 0.29µm were grown epitaxially on 650 μm thick, <100> Silicon (Si) substrates by chemical vapor deposition (CVD) as described by Wang et al [9,10]. Later, 3C-SiC/Si samples were diced into rectangular pieces of 5 x 6 mm 2 .…”

Section: Methodsmentioning

confidence: 99%

Atmospheric Pressure Helium Plasma Treatment on 3C-SiC/Si Surface

Nasir

Zaaba

Zuki

et al. 2014

AMM

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Abstract. In this paper, the effect of inert gas plasma to the morphology of 0.29µm thick 3C-SiC/Si is studied. Helium was used for the plasma treatment and its effect as the etchant gas to the polished side of 3C-SiC/Si surface was determined. The changes of the surface morphology were monitored using Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). From the results obtained, it has shown that the morphology of surface properties of 3C-SiC was modified by differences in helium plasma time of exposure and the degree of roughness of the surface changes. The results show by the SEM and AFM shown that plasma treatment had been successfully implemented for the 0.29µm thick 3C-SiC/Si.

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Demonstration of p-type 3C–SiC grown on 150mm Si(100) substrates by atomic-layer epitaxy at 1000°C

Cited by 61 publications

References 24 publications

High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures

Atmospheric Pressure Helium Plasma Treatment on 3C-SiC/Si Surface

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