The orientation dependence of the piezoresistive effect of p-type single crystalline 3C-SiC thin film grown on a (100)Si wafer was characterized. The longitudinal, transverse gauge factors in [100] orientation, and longitudinal gauge factor in [110] orientation were found to be 5.8, −5.2, and 30.3, respectively. The fundamental piezoresistive coefficients π11, π12, and π44 of p-type 3C-SiC were obtained to be 1.5 × 10−11 Pa−1, −1.4 × 10−11 Pa−1, and 18.1 × 10−11 Pa−1, respectively. From these coefficients, the piezoresistive effect in any crystallographic orientation in p-type single crystalline 3C-SiC can be estimated, which is very valuable in designing micro-mechanical sensors.
Relaxation of interfacial stress and improved quality of heteroepitaxial 3C-SiC films on (100)Si deposited by organometallic chemical vapor deposition at 1200 °C
To lower deposition temperature and reduce thermal mismatch induced stress, heteroepitaxial growth of single-crystalline 3C-SiC on 150 mm Si wafers was investigated at 1000 o C using alternating supply epitaxy. The growth was performed in a hot-wall low-pressure chemical vapour deposition reactor, with silane and acetylene being employed as precursors. To avoid contamination of Si substrate, the reactor was filled in with oxygen to grow silicon dioxide, and then this thin oxide layer was etched away by silane, followed by a carbonization step performed at 750 o C before the temperature was ramped up to 1000 o C to start the growth of SiC. Microstructure analyses demonstrated that single-crystalline 3C-SiC is epitaxially grown on Si substrate and the film quality is improved as thickness increases. The growth rate varied from 0.44 to 0.76 ± 0.02 nm/cycle by adjusting the supply volume of SiH 4 and C 2 H 2. The thickness nonuniformity across wafer was controlled with ± 1 %. For a prime
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