Demonstration of 125-Gbps optical interconnects integrated with lasers, optical splitters, optical modulators and photodetectors on a single silicon substrate

Urino, Yutaka; Noguchi, Yoshiji; Noguchi, Masataka; Imai, Masahiko; Yamagishi, M; Saitou, Shigeru; Hirayama, Naoki; Takahashi, Masayuki; Takahashi, Hiroyuki; Saito, Emiko; Okano, Makoto; Shimizu, Takanori; Hatori, Nobuaki; Ishizaka, Masashige; Yamamoto, Tsuyoshi; Baba, Toshihide; Akagawa, Takeshi; Akiyama, Suguru; Usuki, Tatsuya; Okamoto, Daisuke; Miura, Makoto; Fujikata, Junichi; Shimura, Daisuke; Okayama, Hideaki; Yaegashi, Hiroki; Tsuchizawa, Tai; Yamada, Koji; Mori, Masahiko; Horikawa, Tsuyoshi; Nakamura, Takahiro; Arakawa, Yasuhiko

doi:10.1364/oe.20.00b256

Cited by 53 publications

(14 citation statements)

References 6 publications

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“…The laser diode is described using a current-controlled current source where the output current I LD is a function of input current I source . The dissipation current to ground represents coupling loss in the spot size converter that has a transmission efficiency SSC ¼ 0:59 (−2.3 dB) [2]. The parameters of a silicon optical modulator consisting of PIN diodes were taken from Ref.…”

Section: Equivalent Circuit Model Of Silicon Optical Interposermentioning

confidence: 99%

“…The electrical-to-optical (EO) converter in the equivalent circuit expresses the modulation of the input light from the laser diode by the electrical signal from the driver. The behavior of the EO converter depends on the characteristics of the Mach-Zehnder interferometer and its excessive loss as given by the following equation mod I SSC ð1 þ C pin V pin =Q Þ=2, in which I mod is modulated equivalent current, mod ¼ 0:52 (−2.8 dB) [2] is optical excessive loss, and V pin is the voltage to diode capacitance C pin [13]. The dissipation current to ground represents propagating loss in the optical waveguide with a transmission efficiency WG ¼ 0:60 (−2.2 dB) [2].…”

Section: Equivalent Circuit Model Of Silicon Optical Interposermentioning

confidence: 99%

“…The behavior of the EO converter depends on the characteristics of the Mach-Zehnder interferometer and its excessive loss as given by the following equation mod I SSC ð1 þ C pin V pin =Q Þ=2, in which I mod is modulated equivalent current, mod ¼ 0:52 (−2.8 dB) [2] is optical excessive loss, and V pin is the voltage to diode capacitance C pin [13]. The dissipation current to ground represents propagating loss in the optical waveguide with a transmission efficiency WG ¼ 0:60 (−2.2 dB) [2]. Optical-to-electrical (OE) conversion in the photodiode (PD) is expressed using a current-controlled current source that has a quantum efficiency PD of 80%.…”

Section: Equivalent Circuit Model Of Silicon Optical Interposermentioning

confidence: 99%

“…We have previously proposed a photonics-electronics convergence system using a silicon optical interposer to improve the bandwidth bottleneck. We demonstrated a high bandwidth-density of more than 10 Tbps/cm 2 in a silicon optical interposer integrated with an arrayed laser diode, optical modulators, photodiodes, and optical waveguides on a single silicon substrate [2,3]. Furthermore, our optical interposer was verified to be compatible with a high-performance field-programmable gate array (FPGA) [4].…”

Section: Introductionmentioning

confidence: 99%

“…Transmission coefficients, eye-diagrams, and the bit error rate (BER) of the optical link were analyzed using an equivalent circuit. In addition, the validity of the calculations as compared with experimental results was discussed [2].…”

Section: Introductionmentioning

confidence: 99%

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Bit error rate analysis of a silicon optical interposer using its equivalent circuit

Okamoto

Akagawa

Usuki

et al. 2015

IEICE Electron. Express

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Abstract:We analyzed the bit error rate of optical data links in a silicon optical interposer using an equivalent-circuit model. Both optical and electrical signals can be simultaneously simulated in a circuit model where optical signals are expressed as equivalent currents. The modeled silicon optical interposer consisted of a laser diode, an optical modulator, an optical waveguide, and a photodiode. The electrical parameters of the devices were obtained from experimental results. The calculated 12.5-Gbps eye diagram and minimum sensitivity of −5.6 dBm were consistent with the experimental results.

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Section: Equivalent Circuit Model Of Silicon Optical Interposermentioning

confidence: 99%

Section: Equivalent Circuit Model Of Silicon Optical Interposermentioning

confidence: 99%

Section: Equivalent Circuit Model Of Silicon Optical Interposermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Bit error rate analysis of a silicon optical interposer using its equivalent circuit

Okamoto

Akagawa

Usuki

et al. 2015

IEICE Electron. Express

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Research Toward a Heterogeneously Integrated InGaN Laser on Silicon

Kamei

Kamikawa

Araki

et al. 2019

Physica Status Solidi (a)

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A heterogeneously integrated InGaN laser diode (LD) on Si is proposed as a path toward visible wavelength photonic integrated circuits (PICs) on Si. Herein, InGaN films are vertically stacked on a TiO2 waveguide (WG) fabricated on a Si wafer by bonding. In the light propagation direction, it is composed of a hybrid InGaN/TiO2 section, a TiO2 WG, an adiabatic taper, and mirrors that can form a cavity. As the refractive index of GaN is well matched with that of TiO2, the optical transverse mode extends to both the GaN and TiO2 in a hybrid mode. Modes between a hybrid InGaN/TiO2 and a pure TiO2 WG can transfer with an adiabatic taper structure. The coupling loss is calculated to be less than 0.5 dB with fairly short taper length of 78 μm and tip width of 200 nm. GaN substrate removal and bonding are critical fabrication steps of this LD and PIC. The substrate removal is successfully done by photoelectrochemical etching. Although direct bonding of GaN wafers with thermal oxide on Si is successful, GaN epitaxial wafers are more difficult. An implication and remedy of this is discussed in terms of surface roughness of GaN epitaxial film.

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The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

Hiraishi

Shirai

Kwoen

et al. 2020

Physica Status Solidi (a)

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In this article, the quantum dot intermixing (QDI) technique previously developed for 1550 nm‐band InAs/InAlGaAs QD is applied to 1200 nm‐band InAs/GaAs QD. Three methods of defect introduction for triggering the QDI are used such as inductively coupled plasma reactive ion etching (ICP‐RIE) (Ar+) and ion implantation (Ar+ and B+). As a result, about 80 nm photoluminescence (PL) peak wavelength shift is obtained for ICP‐RIE when annealing is performed at 575 °C, after etching down to 450 nm to the QD layer. On the contrary, about 110 nm PL peak wavelength shift is obtained for B+ ion implantation at an acceleration energy of 120 keV and a dose of 1.0 × 1014 cm−2 and subsequent annealing. Cross‐sectional image analyses by scanning transmission electron microscope (STEM) and energy‐dispersive X‐ray spectroscopy (EDX) clarified the modification of InAs QD structures by the QDI process.

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Demonstration of 125-Gbps optical interconnects integrated with lasers, optical splitters, optical modulators and photodetectors on a single silicon substrate

Cited by 53 publications

References 6 publications

Bit error rate analysis of a silicon optical interposer using its equivalent circuit

Bit error rate analysis of a silicon optical interposer using its equivalent circuit

Research Toward a Heterogeneously Integrated InGaN Laser on Silicon

The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

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