The 1200 nm‐Band InAs/GaAs Quantum Dot Intermixing by Dry Etching and Ion Implantation

Abstract

In this article, the quantum dot intermixing (QDI) technique previously developed for 1550 nm‐band InAs/InAlGaAs QD is applied to 1200 nm‐band InAs/GaAs QD. Three methods of defect introduction for triggering the QDI are used such as inductively coupled plasma reactive ion etching (ICP‐RIE) (Ar+) and ion implantation (Ar+ and B+). As a result, about 80 nm photoluminescence (PL) peak wavelength shift is obtained for ICP‐RIE when annealing is performed at 575 °C, after etching down to 450 nm to the QD layer. On the contrary, about 110 nm PL peak wavelength shift is obtained for B+ ion implantation at an acceleration energy of 120 keV and a dose of 1.0 × 1014 cm−2 and subsequent annealing. Cross‐sectional image analyses by scanning transmission electron microscope (STEM) and energy‐dispersive X‐ray spectroscopy (EDX) clarified the modification of InAs QD structures by the QDI process.