Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

Xia, Zhanbo; Joishi, Chandan; Krishnamoorthy, Sriram; Bajaj, Sanyam; Zhang, Yuewei; Brenner, Mark; Lodha, Saurabh; Rajan, Siddharth

doi:10.1109/led.2018.2805785

Cited by 112 publications

(67 citation statements)

References 28 publications

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“…The calculated values of the source and drain contact resistance (R C ) of all the three devices are about 80 k . R C was extracted when the gate voltage is large enough to minimize the channel resistance from output characteristics of three devices in the linear region [30], [31]. When the…”

Section: Device Fabrication and I-v Characteristicsmentioning

confidence: 99%

High Performance ${\beta}$ -Ga₂O₃ Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

Noh

Alajlouni

Tadjer

et al. 2019

IEEE J. Electron Devices Soc.

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To suppress severe self-heating under high power density, we herein demonstrate top-gate nano-membrane β-gallium oxide (β-Ga 2 O 3) field effect transistors on a high thermal conductivity diamond substrate. The devices exhibit enhanced performance, with a record high maximum drain current of 980 mA/mm for top-gate β-Ga 2 O 3 field effect transistors and 60% less temperature increase from reduced self-heating, compared to the device on a sapphire substrate operating under identical power density. With improved heat dissipation, β-Ga 2 O 3 field effect transistors on a diamond substrate are validated using an ultrafast high-resolution thermoreflectance imaging technique, Raman thermography, and thermal simulations. INDEX TERMS β-Ga 2 O 3 FET, diamond, nano-membrane, thermal conductivity, self-heating effect.

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Section: Device Fabrication and I-v Characteristicsmentioning

confidence: 99%

High Performance ${\beta}$ -Ga₂O₃ Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

Noh

Alajlouni

Tadjer

et al. 2019

IEEE J. Electron Devices Soc.

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“…Following the first Ga2O3 transistor demonstrations [3], a report by Green et al validated β-Ga2O3 as a high-power semiconductor material by fabricating a MOSFET with a breakdown electric field exceeding 3.8 MV/cm, which was the first demonstration of β-Ga2O3 having a higher breakdown field than both GaN (3 MV/cm) and SiC (3.18 MV/cm) [4]. These excellent material properties have allowed for the development of a wide variety of semiconductor devices such as high-voltage Schottky barrier diodes (SBDs) [5]- [7] and transistors with high current density [8]- [11], high breakdown voltage [3], [4], [12]- [15], radio frequency operation [11], [16], and vertical topology [17], [18]. Recently, work by Lv et al demonstrated a sourcefield-plated Ga2O3 MOSFET with a record-setting power figure-of-merit (Vbr 2 /Ron,sp) of 50.4 MW/cm 2 [19].…”

Section: Introductionmentioning

confidence: 99%

Self-Heating Characterization of $\beta$ -Ga₂O₃ Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography

Blumenschein

Moule

Dalcanale

et al. 2020

IEEE Trans. Electron Devices

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β-Ga2O3 thin-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) were evaluated using both DC and pulsed I-V measurements. The reported pulsed I-V technique was used to study self-heating effects in the MOSFET channel. The device was analyzed over a large temperature range of 23 to 200°C. A relationship between dissipated power and channel temperature was established, and it was found that the MOSFET channel was heating up to 208°C when dissipating 2.5 W/mm of power. The thermal resistance of the channel was found to be 73°C-mm/W. The results are supported with experimental Raman nano-thermography and thermal simulations and are in excellent agreement with pulsed I-V findings. The high thermal resistance underpins the importance of optimizing thermal management in future Ga2O3 devices.

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“…Moreover, even with this large band gap, βGAO can be highly doped with shallow donors such as Si and Sn, attaining free-electron concentrations n ≈ 2 × 10 20 cm −3 4 . Such high concentrations enable transparent electrodes for photovoltaics and flat-panel displays, and regrown ohmic contacts 5 . Finally, homoepitaxial device technology is possible because large βGAO crystals can be grown by several different techniques 2 .…”

Section: Introductionmentioning

confidence: 99%

Classical and quantum conductivity in β-Ga2O3

Leedy

2019

Sci Rep

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The conductivity σ, quantum-based magnetoconductivity Δσ = σ(B) − σ(0), and Hall coefficient RH (= µH/σ) of degenerate, homoepitaxial, (010) Si-doped β-Ga2O3, have been measured over a temperature range T = 9–320 K and magnetic field range B = 0–10 kG. With ten atoms in the unit cell, the normal-mode phonon structure of β-Ga2O3 is very complex, with optical-phonon energies ranging from kTpo ~ 20–100 meV. For heavily doped samples, the phonon spectrum is further modified by doping disorder. We explore the possibility of developing a single function Tpo(T) that can be incorporated into both quantum and classical scattering theory such that Δσ vs B, Δσ vs T, and µH vs T are all well fitted. Surprisingly, a relatively simple function, Tpo(T) = 1.6 × 103{1 − exp[−(T + 1)/170]} K, works well for β-Ga2O3 without any additional fitting parameters. In contrast, Δσ vs T in degenerate ScN, which has only one optical phonon branch, is well fitted with a constant Tpo = 550 K. These results indicate that quantum conductivity enables an understanding of classical conductivity in disordered, multi-phonon semiconductors.

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Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

Cited by 112 publications

References 28 publications

High Performance ${\beta}$ -Ga₂O₃ Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

High Performance ${\beta}$ -Ga₂O₃ Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

Self-Heating Characterization of $\beta$ -Ga₂O₃ Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography

Classical and quantum conductivity in β-Ga2O3

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Delta Doped $\beta$ -Ga2O3 Field Effect Transistors With Regrown Ohmic Contacts

Cited by 112 publications

References 28 publications

High Performance ${\beta}$ -Ga2O3 Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

High Performance ${\beta}$ -Ga2O3 Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

Self-Heating Characterization of $\beta$ -Ga2O3 Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography

Classical and quantum conductivity in β-Ga2O3

Contact Info

Product

Resources

About

High Performance ${\beta}$ -Ga₂O₃ Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

High Performance ${\beta}$ -Ga₂O₃ Nano-Membrane Field Effect Transistors on a High Thermal Conductivity Diamond Substrate

Self-Heating Characterization of $\beta$ -Ga₂O₃ Thin-Channel MOSFETs by Pulsed ${I}$ –${V}$ and Raman Nanothermography