Degradation analysis of 3J InGaP/InGaAs/InGaAsN solar cell due to irradiation induced defects with a comparative study on bottom homo and hetero InGaAsN subcell

Sukeerthi, M.; Kotamraju, Siva; Meetei, Raghu; Rao, Prabhu Nireekshana

doi:10.1016/j.solener.2018.09.059

Cited by 9 publications

(2 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, Ge with a lower bandgap (0.7 eV) causes a current mismatch between the three subcells, which reduces the efficiency of the InGaP/GaAs/Ge triple-junction solar cells [4]. To overcome this problem, researchers proposed inserting InGaAsN with a band gap of 1 eV between GaAs and Ge to achieve lattice matching and current matching at the same time [5][6][7]. InGaP/InGaAs/InGaAsN/Ge multijunction solar cells have a theoretical efficiency of more than 50% [6].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells

Yang

et al. 2022

Crystals

View full text Add to dashboard Cite

Inverted metamorphic triple junction (IMM3J) GaInP/GaAs/InGaAs solar cells have the advantages of high efficiency, excellent radiation resistance, lightweight and flexible properties, especially suitable for space application. In this paper, we first fabricate the IMM3J GaInP/GaAs/InGaAs solar cell, which has a short circuit current density of 16.5 mA/cm2, an open circuit voltage of 3141.8 mV, a fill factor of 84.3%, and an efficiency of 32.2%. Then, the IMM3J solar cell is irradiated by 2 MeV protons with different fluences from 2 × 1011 cm−2 to 2 × 1012 cm−2. Finally, the output electrical properties of IMM3J solar cells at the beginning of life and end of life are analyzed by current-voltage characterization. The degradation behaviors of each subcell before and after irradiation can also be described by the external quantum efficiency and short circuit current density.

show abstract

Section: Introductionmentioning

confidence: 99%

“…InGaP/InGaAs/InGaAsN/Ge multijunction solar cells have a theoretical efficiency of more than 50% [6]. However, efficiency (>50%) is difficult to achieve in actual fabrication since high-quality InGaAsN film is difficult to grow and the addition of a small amount of N in InGaAs will produce intrinsic defects in the solar cell [7].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells

Yang

et al. 2022

Crystals

View full text Add to dashboard Cite

show abstract

Degradation study on triple junction inverted metamorphic InGaP/InGaAs-GaAsP MQW/InGaAs multiple quantum well solar cell using advanced physical models

Sukeerthi

Kotamraju

2023

Micro and Nanostructures

View full text Add to dashboard Cite

Study of degradation in 3J inverted metamorphic (IMM) solar cell due to irradiation-induced deep level traps and threading dislocations using finite element analysis

Sukeerthi

Kotamraju

2021

Physica E: Low-dimensional Systems and Nanostructures

View full text Add to dashboard Cite

Degradation analysis of 3J InGaP/InGaAs/InGaAsN solar cell due to irradiation induced defects with a comparative study on bottom homo and hetero InGaAsN subcell

Cited by 9 publications

References 19 publications

Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells

Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells

Degradation study on triple junction inverted metamorphic InGaP/InGaAs-GaAsP MQW/InGaAs multiple quantum well solar cell using advanced physical models

Study of degradation in 3J inverted metamorphic (IMM) solar cell due to irradiation-induced deep level traps and threading dislocations using finite element analysis

Contact Info

Product

Resources

About