Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells

Xu, Jing; Yang, Kunjie; Xu, Qing; Zhu, Xiongwei; Wang, Xin; Lu, Ming

doi:10.3390/cryst12050670

Cited by 4 publications

(2 citation statements)

References 29 publications

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“…This means that a larger percentage of incident photons can be converted into electrical energy, resulting in greater overall conversion efficiency. [13][14][15][16] In addition, flexible IMM solar cells have the advantages of high efficiency, excellent radiation resistance, lightweight, and flexible properties, making them suitable for various applications.…”

Section: Introductionmentioning

confidence: 99%

Electrostatically Sprayed Flexible Encapsulation for High‐Performance III–V Solar Cells

Zhang,

Xiong,

Gao

et al. 2023

Solar RRL

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Multijunction solar cells that employ III–V semiconductors are highly efficient, lightweight, and flexible, rendering them excellent candidates for use in automobiles, satellites, or flexible electronics. To improve the operational stability of these high‐efficiency solar cells for practical applications, herein an innovative method for encapsulating high‐performance flexible III–V solar cells is proposed, which enables solar cell with a photoelectric conversion efficiency of 32.72% to maintain an efficiency of 31.67% after packaging under the AM1.5 global spectrum. The module remains the same efficiency of ≈29.7% under AM0 after encapsulation. The key to this approach is electrostatically spraying and curing fluorinated ethylene propylene materials to create a flexible, cost‐effective, and efficient encapsulation layer for III–V solar cells. The proposed encapsulation method demonstrates excellent adhesion, barrier properties, easy scalability, and long‐term stability, enabling enhanced performance, extended lifetimes, and improved reliability of III–V solar cells.

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Section: Introductionmentioning

confidence: 99%

Electrostatically Sprayed Flexible Encapsulation for High‐Performance III–V Solar Cells

Zhang,

Xiong,

Gao

et al. 2023

Solar RRL

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“…They found that the incidence of electrons introduces lattice defects in the cells that act as recombination centers, directly impacting carrier lifetimes. A reviewed report found that radiation damage in solar cells causes a reduction in minority carrier diffusion length and thereby reduces overall conversion efficiency [ 39 , 40 , 41 , 42 , 43 ]. Based on the above reviews, irradiation by high-energy radiation particles degrade the physical properties of irradiated semiconductor materials.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation

et al. 2022

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A systematic investigation of the changes in structural and optical properties of a semi-insulating GaAs (001) wafer under high-energy electron irradiation is presented in this study. GaAs wafers were exposed to high-energy electron beams under different energies of 10, 15, and 20 MeV for absorbed doses ranging from 0–2.0 MGy. The study showed high-energy electron bombardments caused roughening on the surface of the irradiated GaAs samples. At the maximum delivered energy of 20 MeV electrons, the observed root mean square (RMS) roughness increased from 5.993 (0.0 MGy) to 14.944 nm (2.0 MGy). The increased RMS roughness with radiation doses was consistent with an increased hole size of incident electrons on the GaAs surface from 0.015 (0.5 MGy) to 0.066 nm (2.0 MGy) at 20 MeV electrons. Interestingly, roughness on the surface of irradiated GaAs samples affected an increase in material wettability. The study also observed the changes in bandgap energy of GaAs samples after irradiation with 10, 15, and 20 MeV electrons. The band gap energy was found in the 1.364 to 1.397 eV range, and the observed intense UV-VIS spectra were higher than in non-irradiated samples. The results revealed an increase of light absorption in irradiated GaAs samples to be higher than in original-based samples.

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High-speed InP-based heterojunction bipolar transistors

Bolognesi,

Arabhavi,

Hamzeloui

2023

Reference Module in Materials Science and Materials Engineering

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Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells

Cited by 4 publications

References 29 publications

Electrostatically Sprayed Flexible Encapsulation for High‐Performance III–V Solar Cells

Electrostatically Sprayed Flexible Encapsulation for High‐Performance III–V Solar Cells

Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation

High-speed InP-based heterojunction bipolar transistors

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