Study of degradation in 3J inverted metamorphic (IMM) solar cell due to irradiation-induced deep level traps and threading dislocations using finite element analysis

Defects analysis of radiation damage mechanism for IMM triple-junction solar cell under 1 MeV electron irradiation

“…However, the GaAs sub-cell and InGaAs sub-cell are not lattice-matched, by adding step buffer layer can further reduce the generation of threading dislocation and ensure high lattice quality [16]. At the condition of AM0 (1 sun), the efficiency of GaInP/GaAs/InGaAs IMM solar cell could reach ∼30.6%, which is 7% higher than the traditional GaInP/GaAs/Ge triple-junction solar cell (∼28.6%) [17].…”

“…Due to the higher current of Ge sub-cell, the solar cell would produce thermalization loss and then limit the conversion efficiency. The sub-cell with a band gap of 1 eV would be a better alternative to Ge bottom cell for further boosting the efficiency of solar cell [9]. In 2005, NREL proposed the inverted metamorphic multijunction (IMM) GaInP/GaAs/GaInAs (1.87/1.42/1.02 eV) solar cell [10].…”

Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells

“…An alternative method is to use InGaAs with a band gap of 1 eV to replace Ge in conventional lattice-matched InGaP/GaAs/Ge solar cells to eliminate current mismatch. However, there is 2% lattice mismatch between In 0.3 GaAs and GaAs [8,9]. The threading dislocations generated by lattice mismatch can be reduced by using graded composition buffer layers [10].…”

Evaluation of electricity generation on GeSn single‐junction solar cell

“…The Ge-based III-V TJ solar cells of the various bandgap combination (ie, to absorb various color band ranges of the solar spectrum) display high efficiencies. [7][8][9] A number of Ge-based III-V TJ solar cell concepts 8,10,11 are studied by research groups around the world in order to improve the conversion efficiency and reduce devices cost. But, until now, it cannot be widely adopted in the field of civilian application due to its toxicity, poor mechanical properties, the limited abundance of III-V elements in earth, and so on.…”

“…To confine the misfit dislocation and minimize the strain, the previous study reported 6 that multijunction (MJ) III‐V devices use compositionally graded buffers, which have demonstrated solar‐to‐electrical conversion efficiency of 39.2% (1 sun AM1.5G). The Ge‐based III‐V TJ solar cells of the various bandgap combination (ie, to absorb various color band ranges of the solar spectrum) display high efficiencies 7‐9 . A number of Ge‐based III‐V TJ solar cell concepts 8,10,11 are studied by research groups around the world in order to improve the conversion efficiency and reduce devices cost.…”