Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO₂Gate Dielectrics

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2Gate Dielectrics

“…This high noise level for the bulk device may be due to the high defect density near the Si/STI interface in the sub-fin region in as-processed devices. motion of H + between sites in the near-interfacial HfO2 and a BP surface site in response to the applied bias [15]. This H + shuttling also occurs in Si-based MOS devices with HfO2 gate dielectrics [96], suggesting similar motion may occur in these devices.…”

“…One of the examples [1], [15], [67], [72], [73] is shown in Fig. I-10, where defects in graphene transistors activated during irradiation were passivated during high-temperature annealing and were attributed to the influence of hydrogen-and oxygen-related defects.…”

“…These changes are caused by the impact of a relatively small number of additional radiation-induced oxide and border traps, compared with pre-irradiation, consistent with the small shifts in Vth, as we discuss below. These defects are located in the gate stacks and in the STI for bulk devices and in the BOX for the SOI FinFETs [6], [9], [15], [53], [59], [66], [86]- [88]. Lorentzian form of noise spectrum [6], [50], [53], [86], [87], [89], [90].…”

“…Lowfrequency noise has been used as a reliability-determining nondestructive technique for evaluating quality of dielectric-semiconductor interface in electronic devices, both in terms of performance of fabricated devices [7], [8] and characterization of new microelectronic materials and compositions [9], as well as a determination of metallization reliability [10]- [12], and variability of device parameters on the circuit level [13]. 1/f noise has been proposed as a tool for nondestructively predicting the radiation hardness of MOS devices [14], and as a means for understanding reliability-limiting defects and impurities in the as-processed and stressed and/or irradiated devices [6], [15], [16].…”

“…Here SV is the excess voltage-noise power spectral density after the thermal noise is subtracted, τ0 = 1/f0 is the characteristic attempt time of the process leading to the noise and the frequency ω = 2πf. A value of τ0 = 1.81 ×10 -15 s is chosen here to be consistent with previous MOS studies [6], [15], [58]. For noise described by Eq.…”