Defect reduction of GaAs/Si epitaxy by aspect ratio trapping

Li, J. Z.; Bai, J.; Major, Cheryl; Carroll, M.; Lochtefeld, A.; Shellenbarger, Z.A.

doi:10.1063/1.2924410

Cited by 66 publications

(48 citation statements)

References 12 publications

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“…The resultant III-V on Si templates can be treated as virtual substrates (or compliant substrates) for subsequent epi-structure growth and device fabrication. Initial investigations of continuous GaAs ilms on SiO 2 -patterned Si substrates [136] discovered coalescence defects appearing in the form of threading dislocations, twin defects and stacking faults above the SiO 2 ( Fig. 20(a) and (b)).…”

Section: U N C O R R E C T E D P R O O F Q Li Km Lau Progress In mentioning

confidence: 99%

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Lau

2017

Progress in Crystal Growth and Characterization of Materials

116

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Please note: Changes made as a result of publishing processes such as copy-editing, formatting and page numbers may not be reflected in this version. For the definitive version of this publication, please refer to the published source. You are advised to consult the publisher's version if you wish to cite this paper.This version is being made available in accordance with publisher policies. See http://orca.cf.ac.uk/policies.html for usage policies. Copyright and moral rights for publications made available in ORCA are retained by the copyright holders. U N C O R R E C T E D P R O O F ARTICLE INFO ABSTRACTMonolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.

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Section: U N C O R R E C T E D P R O O F Q Li Km Lau Progress In mentioning

confidence: 99%

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Lau

2017

Progress in Crystal Growth and Characterization of Materials

116

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“…In this paper we discuss a III/V laser integration approach on (001) Si, which is based on aspect ratio trapping (ART) [21] [22] in narrow oxide trenches starting with a V-shaped Si surface. A high aspect ratio allows for an efficient defect trapping whereas III/V nucleation on the {111} facets of the V-shape avoids the formation of anti-phase domains [23] [24].…”

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confidence: 99%

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Kunert

Guo

Mols

et al. 2016

Applied Physics Letters

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We report on a new integration approach of III/V nano ridges on patterned Silicon (Si) wafers by metal organic vapor phase epitaxy (MOVPE). Trenches of different width (≤ 500nm) were processed in a silicon oxide (SiO2) layer on top of a 300 mm (001) Si substrate. MOVPE growth conditions were chosen in a way to guarantee an efficient defect trapping within narrow trenches and to form a box shaped ridge with increased III/V volume when growing out of the trench. Compressively strained InGaAs/GaAs multi-quantum wells (MQWs) with 19 % Indium were deposited on top of the fully relaxed GaAs ridges as an active material for optical application. Transmission electron microcopy (TEM) investigation shows that very flat QW interfaces were realized. A clear defect trapping inside the trenches is observed whereas the ridge material is free of threading dislocations with only a very low density of planar defects. Pronounced QW photoluminescence (PL) is detected from different ridge sizes at room temperature. The potential of these III/V nano ridges for laser integration on Si substrates is emphasized by the achieved ridge volume which could enable wave guidance and by the high crystal quality in line with the distinct PL. Quantum dot laser is a promising approach, as it seems to degrade less rapidly under the presence of non-radiative defects [18] [19]. Hetero-epitaxial growth of GaNAsP/GaBP based laser diode lattice matched on Si circumvents the formation of misfit dislocation (MD) but bears new challenges due to the complexity of the involved new material systems such as dilute nitrides

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“…The first challenge is the lattice mismatch between silicon and gallium arsenide (4.1%), which induces the formation of crystalline defects to accommodate the strain in the material. To reduce crystalline defects density, various smart improvements have been investigated like post-growth thermal cycle annealing, 2,8 insertion of dislocation filter layer, 9 selective growth in trenches using aspect ratio trapping (ART) method [10][11][12] or Ge/GeSi buffer layer. 13 The second challenge is the difference of thermal expansion coefficients between Si and III-V (6.6 × 10 −6 K −1 and 2.3 × 10 −6 K −1 for GaAs and Si, respectively), which limits the film thickness before crack appears.…”

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confidence: 99%

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

et al. 2016

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Metal organic chemical vapor deposition of GaAs on standard nominal 300 mm Si(001) wafers was studied. Antiphase boundary (APB) free epitaxial GaAs films as thin as 150 nm were obtained. The APB-free films exhibit an improvement of the room temperature photoluminescence signal with an increase of the intensity of almost a factor 2.5. Hall effect measurements show an electron mobility enhancement from 200 to 2000 cm2/V s. The GaAs layers directly grown on industrial platform with no APBs are perfect candidates for being integrated as active layers for nanoelectronic as well as optoelectronic devices in a CMOS environment.

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Defect reduction of GaAs/Si epitaxy by aspect ratio trapping

Cited by 66 publications

References 12 publications

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

III/V nano ridge structures for optical applications on patterned 300 mm silicon substrate

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

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