Deep hydrogen traps in heavily B-doped diamond

Goss, JP; Briddon, P.R.; Jones, R.; Teukam, Z.; Ballutaud, D.; Jomard, François; Chevallier, J.; Bernard, M.; Deneuville, A.

doi:10.1103/physrevb.68.235209

Cited by 47 publications

(29 citation statements)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It should be noted that the characteristic absorption peaks associated with boron interstitials and boron interstitial complexes in diamond can be observed at 1420, 1530, 1570, and 1910 cm -1 , but no such peaks appeared in our FTIR spectra 34 . Moreover, the absence of the three infrared B-B cluster absorption peaks (553, 560, and 570 cm -1 ) indicate that no aggregated substitutional boron sites were formed 35 . The broader peaks, which appear from 1900 to 2300 cm -1 are the inherent two-phonon lines of diamond associated with C−C bonds.…”

Section: Resultsmentioning

confidence: 99%

Thermal diffusion boron doping of single-crystal natural diamond

Seo

Mikael

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

Abstract:With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occur at the bonded interface between Si and diamond.We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.With the advent of various new renewable energy sources and the emerging need to deliver and convert energy more efficiently, power electronics have received unprecedented attention in recent years. For the last several decades, Si-based power devices have played a dominant role in power conversion electronics. Wide bandgap semiconductor material based power electronics, such as those employing GaN and SiC, are expected to handle more power with higher efficiency than Si-based ones. GaN exhibits higher saturation velocity than Si. However, the thermal conductivity of GaN is low for power conversion systems. Moreover, it is currently difficult to obtain a thick and high quality GaN layer. SiC has its own native substrate, but it has inferior performance matrices (e.g., Johnson's figure of merit) versus GaN. In comparison, diamond exhibits most of the critical material properties for power electronics, except for its small substrate size at present. Diamond has a wide bandgap, high critical electric field, high carrier mobility, high carrier saturation velocities and the highest thermal conductivity among all available semiconductor materials [1][2][3] . Due to its superior electrical properties, the thickness of the highest quality diamond required to block an equivalent amount of voltage is approximately onefifth to one-fourth the thicknesses of GaN or SiC. In particular, the superior thermal conductivity of diamond could greatly simplify the design of heat dissipation and hence simplify entire power electronics modules. Therefore, diamond is considered the best material candidate for power electronics in terms of power switching efficiency, reliability, and system volume and weight.However, besides the lack of large ar...

show abstract

Section: Resultsmentioning

confidence: 99%

Thermal diffusion boron doping of single-crystal natural diamond

Seo

Mikael

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…However, 11 B NMR studies detected a second boron-bonding site of lower symmetry, most abundant in relatively thin (100)-oriented epilayers, and which was proposed to be a local B-H complex (Mukuda 2007). Hydrogen is known to be present in MPCVD diamond layers and to passivate effectively boron acceptors as well as other defects Goss et al 2003). Interstitial boron as well as boron-vacancy or boron-self-interstitial pairs are also mentioned in the literature, but the stability of these incorporation sites has been questioned.…”

Section: Boron Incorporation At High Concentrationsmentioning

confidence: 99%

Metal-to-insulator transition and superconductivity in boron-doped diamond

Bustarret

Achatz

Sacépé

et al. 2007

Phil. Trans. R. Soc. A.

View full text Add to dashboard Cite

The experimental discovery of superconductivity in boron-doped diamond came as a major surprise to both the diamond and the superconducting materials communities. The main experimental results obtained since then on single-crystal diamond epilayers are reviewed and applied to calculations, and some open questions are identified. The critical doping of the metal-to-insulator transition (MIT) was found to coincide with that necessary for superconductivity to occur. Some of the critical exponents of the MIT were determined and superconducting diamond was found to follow a conventional type II behaviour in the dirty limit, with relatively high critical temperature values quite close to the doping-induced insulator-to-metal transition. This could indicate that on the metallic side both the electron-phonon coupling and the screening parameter depend on the boron concentration. In our view, doped diamond is a potential model system for the study of electronic phase transitions and a stimulating example for other semiconductors such as germanium and silicon.

show abstract

“…The electronic structure and stability of B-H complex in diamond have been extensively studied by electronic structure calculations [14][15][16][17][18][19][20][21]. It has been found that the most stable position of the H atom around the substitutional B in diamond is a site slightly shifted from the bridging point between the two B-C bonds.…”

Section: Introductionmentioning

confidence: 99%

“…Theoretical studies of diamond doping, including B-H complex, have been concisely summarized in a recent review [22]. As for B pairs, some first-principles calculations have been carried out to understand their stability and electronic structure [17,21,[23][24][25]. Boron pairs are definitely more stable than the isolated substitutional B.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure of boron-doped diamond with B–H complex and B pair

Oguchi

2008

Science and Technology of Advanced Materials

View full text Add to dashboard Cite

The electronic structure of boron-hydrogen complex and boron pair in diamond are studied by first-principles density-functional calculations with supercell models. The electronic structure calculated for the B-H complexes with C 2v or C 3v symmetry and the nearest-neighbor B pair is used to interpret recent experimental results such as B 1s x-ray photoemission spectroscopy, 11 B nuclear quadruple resonance and B K-edge x-ray absorption spectroscopy, which cannot be explained solely by the isolated substitutional boron.

show abstract

Deep hydrogen traps in heavily B-doped diamond

Cited by 47 publications

References 41 publications

Thermal diffusion boron doping of single-crystal natural diamond

Thermal diffusion boron doping of single-crystal natural diamond

Metal-to-insulator transition and superconductivity in boron-doped diamond

Electronic structure of boron-doped diamond with B–H complex and B pair

Contact Info

Product

Resources

About