Metal-to-insulator transition and superconductivity in boron-doped diamond

Bustarret, Étienne; Achatz, Philipp; Sacépé, Benjamin; Chapelier, Claude; Marcenat, C.; Ortéga, L.; Klein, Thierry

doi:10.1098/rsta.2007.2151

Cited by 52 publications

(43 citation statements)

References 52 publications

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“…Therefore, the critical boron concentration n c for the metal-insulator transition, as obtained from the low temperature experiments, lies in the range from 2.3×10 20 cm −3 up to 2.9 × 10 20 cm −3 , in good agreement with the results discussed in previous sections, and with what was found for single crystal and polycrystalline diamond (Ref. 54,55). Due to the granularity of the diamond thin film, we expect that the metalinsulator transition is not only due to the increasing doping within the grains, but also to the increase in intergranular coupling between metallic grains.…”

Section: B2 Low Temperature Regimesupporting

confidence: 80%

Electronic and optical properties of boron-doped nanocrystalline diamond films

et al. 2009

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We report on the electronic and optical properties of boron-doped nanocrystalline diamond (NCD) thin films grown on quartz substrates by CH 4 /H 2 plasma chemical vapor deposition.Diamond thin films with a thickness below 350 nm and with boron concentration ranging from 10 17 cm -3 to 10 21 cm -3 have been investigated. UV Raman spectroscopy and AFM have been used to assess the quality and morphology of the diamond films. Hall effect measurements confirmed the expected p-type conductivity. At room temperature, the conductivity varies from 1.5x10 -8 Ω -1 cm -1 for a non-intentionally doped film up to 76 Ω -1 cm -1 for a heavily B-doped film. Increasing the doping level results in a higher carrier concentration while the mobility decreases from 1.8 cm 2 V -1 s -1 down to 0.2 cm 2 V -1 s -1 . For NCD films with low boron concentration, the conductivity strongly depends on temperature. However, the conductivity and the carrier concentration are no longer temperature-dependent for films with the highest boron doping, and the NCD films exhibit metallic properties. Highly doped films show superconducting properties with critical temperatures up to 2K. The critical boron concentration for the metal-insulator transition is in the range from 2x10 20 cm -3 up to 3x10 20 cm -3 . We discuss different transport mechanisms to explain the influence of the grain boundaries and boron doping on the electronic properties of NCD films. Valence band transport dominates at low boron concentration and high temperatures, 2 whereas hopping between boron acceptors is the dominant transport mechanism for boron doping concentration close to the Mott transition. Grain boundaries strongly reduce the mobility for low and very high doping levels. However, at intermediate doping levels where hopping transport is important, grain boundaries have a less pronounced effect on the mobility. The influence of boron and the effect of grain boundaries on the optoelectronic properties of the NCD films are examined using spectrally resolved photocurrent measurements and photothermal deflection spectroscopy. Major differences occur in the low energy range, between 0.5 -1.0 eV, where both Boron impurities and the sp 2 carbon phase in the grain boundaries govern the optical absorption.

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Section: B2 Low Temperature Regimesupporting

confidence: 80%

Electronic and optical properties of boron-doped nanocrystalline diamond films

et al. 2009

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“…Its behavior varies with the growth orientation: lattice expansion changes with the crystalline growth orientation. The variation of the lattice parameter with the boron concentration depends also on the boron pair formation 30,32 and on the electrostatic interaction when dopant atoms are ionized, [29][30][31] 26,28 Boron concentration into diamond lattice is represented by n B ; n BB is the density of B 2 pairs; and n B À is the concentration of ionized boron.…”

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confidence: 99%

Critical boron-doping levels for generation of dislocations in synthetic diamond

Alegre

Araújo

Fiori

et al. 2014

Applied Physics Letters

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International audienceDefects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH 4 /H 2 molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 10 20 at/cm 3 range in the <111> direction and at 3.2 10 21 at/cm 3 for the <001> one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism

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“…However in dirty superconductors (l ξ), these trajectories mix up and one recovers a flat density of states in the vortex core [12]. We have visualised by STS the Abrikosov array in boron-doped diamond thin films [13][14][15]. These films become dirty superconductors material below a critical temperature of a few Kelvin, which depends on the doping level.…”

Section: Stm At Low Temperaturementioning

confidence: 99%

Hybrid superconducting nanostructures: very low temperature local probing and noise

Chapelier¹,

Lefloch²,

Courtois³

et al. 2010

IJNT

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Abstract:We review the topic of hybrid superconducting nanostructures by introducing the basic physical concepts and describing recent key experimental results. We discuss the superconductivity nucleation in mesoscopic structures, the vortex lattice imaging in doped diamond films, the superconducting proximity effect, multiple Andreev reflection in Josephson junctions and the electronic micro-cooling in hybrid tunnel junctions. An emphasis is put on very low temperature local probes and noise measurement techniques developed in Grenoble.

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Metal-to-insulator transition and superconductivity in boron-doped diamond

Cited by 52 publications

References 52 publications

Electronic and optical properties of boron-doped nanocrystalline diamond films

Electronic and optical properties of boron-doped nanocrystalline diamond films

Critical boron-doping levels for generation of dislocations in synthetic diamond

Hybrid superconducting nanostructures: very low temperature local probing and noise

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