Microelectronics Reliability
 2014
DOI: 10.1016/j.microrel.2014.09.013
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Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation

Hirokazu Sasaki
1
,
K. Kadoiwa
2
,
Hidetoshi Koyama
3
et al.
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Cited by 4 publications
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References 22 publications
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Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation

Sasaki
1
,
Kadoiwa
2
,
Koyama
3
et al. 2014
Microelectronics Reliability
4
0
0
0
View full textAdd to dashboardCite

Decrease in on-state gate current of AlGaN/GaN HEMTs by recombination-enhanced defect reaction of generated hot carriers investigated by TCAD simulation

Sasaki
1
,
Kadoiwa
2
,
Koyama
3
et al. 2014
Microelectronics Reliability
4
0
0
0
View full textAdd to dashboardCite

Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors

Mukherjee
1
,
Darracq
2
,
Curutchet
3
et al. 2018
2018 IEEE International Reliability Physics Symposium (IRPS)
3
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On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices

Putcha
1
,
Cheng
2
,
Alian
3
et al. 2021
2021 IEEE International Reliability Physics Symposium (IRPS)
8
0
2
0
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