2018 IEEE International Reliability Physics Symposium (IRPS) 2018
DOI: 10.1109/irps.2018.8353581
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Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors

Kalparupa Mukherjee
1
,
Frédéric Darracq
2
,
Arnaud Curutchet
3
et al.
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