GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse

Chiocchetta, Francesca; Santi, Carlo De; Rampazzo, F.; Mukherjee, Kalparupa; Grünenpütt, Jan; Sommer, Daniel; Blanck, H.; Lambert, Benoît; Gerosa, A.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo

doi:10.1109/irps48227.2022.9764510

Cited by 2 publications

(1 citation statement)

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“…Low-pressure chemical vapour deposition (LPCVD) approach, used for SiNx passivation of AlGaN/GaN HEMTs, is another surface treatment method to suppress CC. Reliability analysis and impact of passivation and gate foot etching was demonstrated by F. Chiocchetta et al and best stability was observed for LPCVD process [55]. The passivation-prior-to-ohmic process technique [56,57] is made possible by the high-thermal-stability LPCVD-SiNx, and the creation of new surface states on the surface of HEMT is significantly reduced [58][59][60][61].…”

Section: Current Collapse Suppressionmentioning

confidence: 98%

An insight to current collapse in GaN HEMT and suppressing techniques

et al. 2023

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High Electron Mobility Transistors (HEMT) made of aluminum gallium nitride/gallium nitride (AlGaN/GaN) have become a major focus for all electronic devices based on gallium nitride due to its excellent system characteristics. AlGaN/GaN HEMTs have severe issues that degrade their performance and the drain current collapse (CC) is one of them. During switching operations, the CC increases the on-resistance (Ron) leading to an increase in device loss and temperature. This review features the basics related to the current collapse in HEMT and its significance in performance degradation. This paper is concerned with the various advancements reported in recent years to suppress CC in GaN HEMT. Various techniques such as passivation, illumination, free-standing GaN substrate, GaN cap layer including high resistivity GaN cap layer, buffer design, and field plates (FP) have been introduced by various researchers to combat CC. This review analysis will help researchers to employ suitable techniques in their HEMT design for future development.

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