Data retention, endurance and acceleration factors of NROM devices

Janai, M.

doi:10.1109/relphy.2003.1197799

Cited by 36 publications

(24 citation statements)

References 3 publications

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“…The threshold-voltage shift can be due to the lateral motion of charge and electron-hole recombination inside the nitride [6] or due to the vertical loss through the bottom oxide [7], [8]. Recently, a new model was proposed, explaining the threshold-voltage loss by the annealing of the interface traps during retention [9].…”

Section: Endurance and Retentionmentioning

confidence: 99%

New Operating Mode Based on Electron/Hole Profile Matching in Nitride-Based Nonvolatile Memories

Furnemont

Rosmeulen

Zanden

et al. 2007

IEEE Electron Device Lett.

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A new operating mode for the nitride-based nonvolatile memory cells using channel hot electron injection for programming and hot hole injection for erasing is presented. The mismatch between the injected electron and hole profiles during programming and erasing operations, which limits the performance of the device, can be prevented. The profiles, extracted from charge-pumping measurements, are tuned by changing the operating voltages in order to have matched distributions. Substantial improvements in endurance and subsequent high-temperature data retention are demonstrated.

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Section: Endurance and Retentionmentioning

confidence: 99%

New Operating Mode Based on Electron/Hole Profile Matching in Nitride-Based Nonvolatile Memories

Furnemont

Rosmeulen

Zanden

et al. 2007

IEEE Electron Device Lett.

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“…Thus we see that from the one hand the simulation results obtained by our program Memory confirm the relation ∆Q ~ Q and from the other hand the Device simulation program Medici allows confirmation of the relation Q ~ V t , and hence ∆Q ~ ∆V t . These relations are used as a basis to derive the equation for the fast V t shift in conditions of cycling [8,12] …”

Section: Kinetic Features Of Spreading Of Injected Carriers In Onomentioning

confidence: 99%

Computer and experimental study of the gate dielectric in a memory transistor

Avichail-Bibi¹,

Fuks²,

Kiv³

et al. 2007

WIT Transactions on Modelling and Simulation, Vol 46

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We demonstrate a novel approach that enables combining microscopic studies of the behaviour of the injected charge (IC) in the gate dielectric (GD) of the memory transistor and the description of kinetics of memory device service parameters. To study the microscopic processes of the redistribution of the IC in the GD a special package of programs was developed that allows the modelling the migration of injected electrons and holes in the GD. The model accounts real properties of dielectric (spatial distribution of local centres and their characteristics, the dielectric constant and its changes on the microscopic distances, a complex composition of dielectric, temperature conditions and the geometry of the GD). The results of the computer simulation of microscopic characteristics of the IC were used as input data for the commercial Device simulation program "Medici". We found a correlation between microscopic characteristics of IC in GD and the service parameters of the memory device and realized the feedback procedure changing the GD characteristics in the simulation model.

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“…Stability of the threshold voltage, V t of a programmed state at high temperatures (retention quality of the memory device) is characterized by V t shift at high temperatures (HT V t shift) [6][7][8][9].…”

mentioning

confidence: 99%

Computer simulations and experimental study of retention of SONOS device

et al. 2006

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The effect of double programming (DP) on the retention of two-bit SONOS memory devices is studied. After the first programming and bake, the memory cell is programmed again to the V t before bake. Computer simulations of DP operations show that the electrons trapped outside the injection region (IR) create an electric field that prevents lateral spreading of injected electrons. Improved high temperature retention after the second programming and bake is observed: the V t shift after the second programming is half of what it is after the first programming. Simulation results are in agreement with experimental data.

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Data retention, endurance and acceleration factors of NROM devices

Cited by 36 publications

References 3 publications

New Operating Mode Based on Electron/Hole Profile Matching in Nitride-Based Nonvolatile Memories

New Operating Mode Based on Electron/Hole Profile Matching in Nitride-Based Nonvolatile Memories

Computer and experimental study of the gate dielectric in a memory transistor

Computer simulations and experimental study of retention of SONOS device

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