Current-injected 1.54μm light emitting diodes based on erbium-doped GaN

Dahal, R.; Ugolini, C.; Lin, J. Y.; Jiang, Hongxing; Zavada, J. M.

doi:10.1063/1.2955834

Cited by 23 publications

(17 citation statements)

References 12 publications

(12 reference statements)

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“…Figure 1 shows typical PL spectra near 1.54 μm of GaN:Er epilayers at an excitation power of ∼1.6 mW. It is apparent that the 1.54 μm emission is stronger for λ exc 375 nm than for λ exc 405 nm by a factor of about four, which is consistent with our previous results using light-emitting diodes with various λ exc as excitation sources [11]. Figure 2(a) shows the 1.54 μm emission spectra, and Fig.…”

Section: Methodssupporting

confidence: 87%

“…Thus, the presence of a higher photoexcited electron density translates to a higher optical cross section. Because the relative optical absorption coefficient and hence the photoexcited carrier density decrease exponentially with excitation photon energy near the band edge [11,15], the excitation cross section φ exc at λ exc 375 nm is expected to be higher than that at λ exc 405 nm, which is what we observed. Based on Eq.…”

Section: Resultssupporting

confidence: 59%

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Optical excitation cross section of erbium in GaN

Feng

Lin

et al. 2013

Appl. Opt.

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Epilayers of erbium-doped GaN (GaN:Er) were synthesized by metal-organic chemical vapor deposition, and the optical excitation cross section (σ(exc)) of Er ions in this host material were determined. Photoluminescence (PL) measurements were made using laser diodes at excitation wavelengths of 375 and 405 nm, and the integrated emission intensity at 1.54 μm was measured as a function of excitation photon flux. Together with time-resolved PL measurements, values of σ(exc) of Er ions in GaN:Er were obtained. For excitation at 375 nm, the observed excitation cross section was found to be 4.6×10(-17) cm(-2), which is approximately three orders of magnitude larger than that using resonant excitation. Based on the present and previous works, the optical excitation cross section σ(exc) of Er ions in GaN:Er as a function the excitation wavelength has been obtained. The large values of σ(exc) with near-band-edge excitation makes GaN:Er attractive for realization of chip-scale photonic devices for optical communications.

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Section: Methodssupporting

confidence: 87%

Section: Resultssupporting

confidence: 59%

Optical excitation cross section of erbium in GaN

Feng

Lin

et al. 2013

Appl. Opt.

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“…10,11 In fact, pumping at near infrared wavelengths to populate carriers in 4 I 13/2 energy band has an advantage of providing higher photon conversion efficiency than using higher energy photons such as in UV and green wavelengths, which avoided transitions through intermediate energy levels and the associated energy loss during these transitions.…”

mentioning

confidence: 99%

Carrier lifetime in erbium-doped GaN waveguide emitting in 1540 nm wavelength

Wang

Hui

Dahal

et al. 2010

Applied Physics Letters

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We report the characteristics of an erbium-doped GaN semiconductor waveguide amplifier grown by metal-organic chemical vapor deposition. We demonstrated that both 980 and 1480 nm optical pumping were efficient to create population inversion between the I413/2 and I415/2 energy levels. The carrier lifetime in the I413/2 energy band was measured to be approximately 1.5 ms in room temperature, which is slightly shorter than that in erbium-doped silica due to the interaction between the erbium ions and the semiconductor lattice structure. But it is significantly longer than the carrier lifetime in a typical semiconductor optical amplifier which is in the nanosecond regime.

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“…The major advantage of incorporating RE ions into III-Ns like GaN is the possibility to excite their intra-4f transitions through a carrier mediated process essential for typical applications based on p-n junction (Dahal et al, 2008). Furthermore, this RE-doped GaN can be used in variety of radiation environments due to strong radiation hardness without significant luminescence properties degradation after exposure to energetic particles generating defects.…”

Section: Introductionmentioning

confidence: 98%