Optical properties, luminescence quenching mechanism and radiation hardness of Eu-doped GaN red powder phosphor

Jadwisienczak, Wojciech M.; Wiśniewski, K.; Spencer, Michael G.; Thomas, Tiju; Ingram, David C.

doi:10.1016/j.radmeas.2009.12.016

Cited by 10 publications

(3 citation statements)

References 13 publications

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“…III-nitride semiconductors, such as AlN, GaN and InN offer tunable band gaps and favorable thermal, chemical and electronic properties, which facilitate various device applications [5][6][7][8][9] from the ultraviolet through the visible and the infrared range. Moreover, thin film electroluminescent phosphors with red, blue, and green emissions [7][8][9][10][11][12][13][14] imply the promise of full color (white) light capability. Rare earth (RE) doping GaN might have a number of advantages.…”

Section: Introductionmentioning

confidence: 99%

Rare earth 4f hybridization with the GaN valence band

Wang

Mei

McHale

et al. 2012

Semicond. Sci. Technol.

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The placement of the Gd, Er and Yb 4f states within the GaN valence band has been explored by both experiment and theory. The 4d-4f photoemission resonances for various rare-earth(RE)-doped GaN thin films (RE = Gd, Er, Yb) provide an accurate depiction of the occupied 4f state placement within the GaN. The resonant photoemission show that the major Er and Gd RE 4f weight is at about 5-6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other RE-doped semiconductors. For Yb, there is a very little resonant enhancement of the valence band of Yb-doped GaN, consistent with a large 4f 14-δ occupancy. The placement of the RE 4f levels is in qualitative agreement with theoretical expectations.

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Section: Introductionmentioning

confidence: 99%

Rare earth 4f hybridization with the GaN valence band

Wang

Mei

McHale

et al. 2012

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…III-nitride semiconductors, such as AlN, GaN, and InN, offer tunable bandgaps and favorable thermal, chemical, and electronic properties, which facilitate various device applications [5][6][7][8][9] from the ultraviolet through the visible spectrum to the infrared range. Moreover, thin film electroluminescent phosphors with red, blue, and green emissions [7][8][9][10][11][12][13][14][15] imply the promise of full color (white) light capability. Rare earth doping GaN might have a number of advantages: there is the promise that Eu or Er doping will improve the light output.…”

Section: Introductionmentioning

confidence: 99%

“…Although likely to locally strain the lattice, the 4f rare earths will tend to adopt substitutional sites for Ga [1, 2,26] in GaN while significantly altering magnetic [27][28][29][30][31][32][33][34] and optical properties [7][8][9][10][11][12][13][14], and it is therefore of considerable interest to know whether even low concentrations of a rare earth in the GaN host can alter the surface electronic structure. This is likely, as although rare earths are isoelectronic with Ga 3+ , they may be associated with other defects [35,36].…”

Section: Introductionmentioning

confidence: 99%

Resonant photoemission of rare earth doped GaN thin films

McHale

McClory

Petrosky

et al. 2011

Eur. Phys. J. Appl. Phys.

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Abstract. The 4d → 4f Fano resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) were investigated using synchrotron photoemission spectroscopy. The resonant photoemission Fano profiles show that the major Gd and Er rare earth 4f weight is at about 5-6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f 14 occupancy.

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