Study of Defects in GaN In Situ Doped with Eu3+ Ion Grown by OMVPE

Wang, Jingzhou; Koizumi, Akira; Fujiwara, Yoshihiro; Jadwisienczak, Wojciech M.

doi:10.1007/s11664-016-4337-4

Cited by 4 publications

(2 citation statements)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Table 1 presents the parameters used in the numerical calculation of the injection efficiency for the GaN:Eu QW active region. References 65 , 66 were used as a starting point for the relative times between the GaN host, traps-complexes and Eu +3 ions.…”

Section: Simulation Resultsmentioning

confidence: 99%

Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes

Fragkos

Tan

Dierolf

et al. 2017

Sci Rep

Self Cite

View full text Add to dashboard Cite

A physically intuitive current injection efficiency model for a GaN:Eu quantum well (QW) has been developed to clarify the necessary means to achieve device quantum efficiency higher than the state-of-the-art GaN:Eu system for red light emission. The identification and analysis of limiting factors for high internal quantum efficiencies (IQE) are accomplished through the current injection efficiency model. In addition, the issue of the significantly lower IQE in the electrically-driven GaN:Eu devices in comparison to the optically-pumped GaN:Eu devices is clarified in the framework of this injection efficiency model. The improved understanding of the quantum efficiency issue through current injection efficiency model provides a pathway to address the limiting factors in electrically-driven devices. Based on our developed injection efficiency model, several experimental approaches have been suggested to address the limitations in achieving high IQE GaN:Eu QW based devices in red spectral regime.

show abstract

Section: Simulation Resultsmentioning

confidence: 99%

Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes

Fragkos

Tan

Dierolf

et al. 2017

Sci Rep

Self Cite

View full text Add to dashboard Cite

show abstract

“…For this work we assume the same values of material parameters both for the GaN and GaN:Eu region. In addition, for the magnitude of the relative times related to traps, bound-excitons and Eu +3 ions, the experimental results described in 35 , 36 were used as a point of reference.…”

Section: Simulation Resultsmentioning

confidence: 99%

Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes

Fragkos

Dierolf

Fujiwara

et al. 2017

Sci Rep

Self Cite

View full text Add to dashboard Cite

The internal quantum efficiency (IQE) of an electrically-driven GaN:Eu based device for red light emission is analyzed in the framework of a current injection efficiency model (CIE). The excitation path of the Eu+3 ion is decomposed in a multiple level system, which includes the carrier transport phenomena across the GaN/GaN:Eu/GaN active region of the device, and the interactions among traps, Eu+3 ions and the GaN host. The identification and analysis of the limiting factors of the IQE are accomplished through the CIE model. The CIE model provides a guidance for high IQE in the electrically-driven GaN:Eu based red light emitters.

show abstract