Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes

Fragkos, Ioannis E.; Tan, Chee-Keong; Dierolf, Volkmar; Fujiwara, Yoshihiro; Tansu, Nelson

doi:10.1038/s41598-017-15302-y

Cited by 16 publications

(7 citation statements)

References 75 publications

(58 reference statements)

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“…Furthermore, the epitaxial growth-based approach allows the scaling of RGB LED pixels into small areas of 10 × 10 µm 2 or smaller. Another unconventional technique of attaining RGB µLEDs is to use a dilute amount of As or P, or a rare earth element such as Eu, with GaN, which facilitates the tunability of emission wavelengths over the entire visible spectrum [130,131]. More recently, red-greenblue (RGB) 3 × 10 µm 2 pixels on the same substrate were developed using nanoring-shaped nitride µLEDs together with CdSe/ZnS red quantum dots, where the nanorings were straintuned from blue to green emission [132].…”

Section: Nitride Based Micro-ledsmentioning

confidence: 99%

III-Nitride Light-Emitting Devices

et al. 2021

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III-nitride light-emitting devices have been subjects of intense research for the last several decades owing to the versatility of their applications for fundamental research, as well as their widespread commercial utilization. Nitride light-emitters in the form of light-emitting diodes (LEDs) and lasers have made remarkable progress in recent years, especially in the form of blue LEDs and lasers. However, to further extend the scope of these devices, both below and above the blue emission region of the electromagnetic spectrum, and also to expand their range of practical applications, a number of issues and challenges related to the growth of materials, device design, and fabrication need to be overcome. This review provides a detailed overview of nitride-based LEDs and lasers, starting from their early days of development to the present state-of-the-art light-emitting devices. Besides delineating the scientific and engineering milestones achieved in the path towards the development of the highly matured blue LEDs and lasers, this review provides a sketch of the prevailing challenges associated with the development of long-wavelength, as well as ultraviolet nitride LEDs and lasers. In addition to these, recent progress and future challenges related to the development of next-generation nitride emitters, which include exciton-polariton lasers, spin-LEDs and lasers, and nanostructured emitters based on nanowires and quantum dots, have also been elucidated in this review. The review concludes by touching on the more recent topic of hexagonal boron nitride-based light-emitting devices, which have already shown significant promise as deep ultraviolet and single-photon emitters.

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Section: Nitride Based Micro-ledsmentioning

confidence: 99%

III-Nitride Light-Emitting Devices

et al. 2021

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“…Lastly, it is possible to use other semiconductors, but this is a much longer‐term effort. Examples of new semiconductors include GaNP and GaNAs where the dilute amount of As or P results in a significant bowing parameter and bandgaps that sweep through the visible range . Figure shows the case of GaN 1 − x As x , where the substantial bandgap reduction occurs with a relatively low As content of x ≈10% or less .…”

Section: Challenges and Solutionsmentioning

confidence: 99%

“…Simulations show that using dilute‐anion III‐nitrides in active regions can enable red emission . Another novel semiconductor approach is to use Er ions in GaN to create red‐emitting LEDs . These Er‐doped GaN emitters have exhibited high efficiency via photoluminescence but are much lower under electroluminescence .…”

Section: Challenges and Solutionsmentioning

confidence: 99%

“…Another novel semiconductor approach is to use Er ions in GaN to create red‐emitting LEDs . These Er‐doped GaN emitters have exhibited high efficiency via photoluminescence but are much lower under electroluminescence . Both the dilute‐anion III‐nitride and rare‐earth‐doped GaN are in the early phases, but the potential for enhanced efficiency in the green and red are highly promising.…”

Section: Challenges and Solutionsmentioning

confidence: 99%

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III‐Nitride Micro‐LEDs for Efficient Emissive Displays

Wierer

Tansu

2019

Laser & Photonics Reviews

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116

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Emissive displays based on light‐emitting diodes (LEDs), with high pixel density, luminance, efficiency, and large color gamut, are of great interest for applications such as watches, phones, and virtual displays. The high pixel density requirements of some emissive displays require a particular class of LEDs that are sub‐20‐micrometers in length, called micro‐LEDs. While state‐of‐the‐art emissive displays incorporate organic LEDs, an alternative is inorganic III‐nitride LEDs with potential reliability and efficiency benefits. Here we explore the performance, challenges, and prospective outcomes for III‐nitride micro‐LEDs to produce efficient emissive displays and provide insight to advance this technology. Calculations are performed to determine the operating points for the micro‐LEDs and the efficiency of the overall emissive display. It is shown that III‐nitride micro‐LEDs suffer from some of the same problems as their larger‐sized solid‐state lighting LED cousins; however, the operating conditions of micro‐LEDs can result in different challenges and research efforts. These challenges include improving efficiency at low current densities; improving the efficiency of longer wavelength (green and red) LEDs; and creating device designs that can overcome low coupling efficiency, high surface recombination, and display assembly difficulties.

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“…However, balancing the lattice mismatch between different materials has always been the paramount challenge for heterojunction formation. For example, high-quality GaN-based heterojunctions suffer from stress, defect, and lattice mismatch which limit the device performance. − On the other hand, van der Waals (vdW) epitaxy completely relaxes the lattice and thermal matching related strain restriction due to the absence of covalent bonds between the substrate and the epitaxial layer. The vdW epitaxy was first demonstrated by Koma et al in 1984 for the heteroepitaxial growth of layered crystals of NbSe 2 on 2H-MoS 2 using molecular beam epitaxy .…”

Section: Introductionmentioning

confidence: 99%

Hybrid Integration of n-MoS₂/p-GaN Diodes by Quasi-van der Waals Epitaxy

Liu

Huang

Choi

et al. 2020

ACS Appl. Electron. Mater.

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Compound semiconductor heterojunctions have enabled various optoelectronic devices. Nonetheless, the formation of heterojunctions is limited by the lattice matching between the two materials. On the other hand, two-dimensional (2D) semiconducting material and three-dimensional (3D) material heterojunction has attracted tremendous attention in recent years due to its immunity to the lattice mismatch. However, 2D/3D heterojunction formation by transferring 2D material suffers from contamination and defects created during the transfer process. Thus, direct growth of 2D material on 3D semiconducting material is crucial for the next generation heterojunction devices. In this work, we demonstrate n-MoS 2 /p-GaN diodes monolithically formed by quasi-van der Waals epitaxy. Monolayer MoS 2 has been grown on a GaN substrate through a powder-based chemical vapor deposition (CVD) system. The triangular MoS 2 flakes show well-aligned morphology with the GaN hexagonal crystal structure in the initial stage of the growth. Raman and PL mapping confirms the excellent uniformity of the monolayer MoS 2 film on the GaN substrate. The growth of MoS 2 on patterned GaN substrates are also studied, which yields monolayer and few-layer MoS 2 formation on the planar surface and the pyramidal sidewalls, respectively. Finally, the n-MoS 2 / p-GaN diodes have been electrically characterized and show well-defined rectifying behavior with an ideality factor of ∼1.3.

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Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes

Cited by 16 publications

References 75 publications

III-Nitride Light-Emitting Devices

III-Nitride Light-Emitting Devices

III‐Nitride Micro‐LEDs for Efficient Emissive Displays

Hybrid Integration of n-MoS₂/p-GaN Diodes by Quasi-van der Waals Epitaxy

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Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes

Cited by 16 publications

References 75 publications

III-Nitride Light-Emitting Devices

III-Nitride Light-Emitting Devices

III‐Nitride Micro‐LEDs for Efficient Emissive Displays

Hybrid Integration of n-MoS2/p-GaN Diodes by Quasi-van der Waals Epitaxy

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Hybrid Integration of n-MoS₂/p-GaN Diodes by Quasi-van der Waals Epitaxy