Optical excitation cross section of erbium in GaN

Abstract

Epilayers of erbium-doped GaN (GaN:Er) were synthesized by metal-organic chemical vapor deposition, and the optical excitation cross section (σ(exc)) of Er ions in this host material were determined. Photoluminescence (PL) measurements were made using laser diodes at excitation wavelengths of 375 and 405 nm, and the integrated emission intensity at 1.54 μm was measured as a function of excitation photon flux. Together with time-resolved PL measurements, values of σ(exc) of Er ions in GaN:Er were obtained. For excitation at 375 nm, the observed excitation cross section was found to be 4.6×10(-17) cm(-2), which is approximately three orders of magnitude larger than that using resonant excitation. Based on the present and previous works, the optical excitation cross section σ(exc) of Er ions in GaN:Er as a function the excitation wavelength has been obtained. The large values of σ(exc) with near-band-edge excitation makes GaN:Er attractive for realization of chip-scale photonic devices for optical communications.

Lanthanides and actinides: Annual survey of their organometallic chemistry covering the year 2013

“…Photoluminescence (PL) measurements were made using laser diodes at excitation wavelengths of 375 and 405 nm, and the integrated emission intensity at 1.54 m was measured as a function of excitation photon flux. It was pointed out that the large values of exc with near-band-edge excitation makes GaN:Er attractive for realization of chip-scale photonic devices for optical communications [146]. Also, scandium-doped GaN layers (GaN:Sc) were grown on SiN treated sapphire substrates by atmospheric pressure metal-organic vapor phase epitaxy (AP-MOVPE) using tris(cyclopentadienyl)scandium (Cp 3 Sc) as a scandium precursor.…”

Infrared emitters made from III-nitride semiconductors

“…Favennec et al (1989) established that the thermal quenching in erbium-doped semiconductors decreases with increasing bandgap, which has driven research on RE-doped GaN. The RE doping of GaN can be accomplished by ion implantation (Wilson et al , 1994) or by in situ doping during growth (Mackenzie et al , 1997;Hori et al , 2004Hori et al , , 2006Ugolini et al , 2006;Feng, 2013). Ion implantation has the advantage of simplicity and it has good control of the dopant location and density independent of the growth conditions.…”

Electronic and optical properties of Er doped in AlN

“…6,7 Hence, there will be less thermal quenching compared to other semiconductor hosts. Recently, typical Er emission in the infrared at 1.54 μm by using Er-doped GaN [2][3][4][5]8 and Er-doped AlN have been achieved, [9][10][11] which matches the wavelength corresponding to the minimum attenuation loss in telecommunication fibers. Also, visible-light-emitting display is another application for these rare-earth-doped nitrides.…”