Infrared emitters made from III-nitride semiconductors

Kotsar, Y.; Monroy, E.

doi:10.1533/9780857099303.3.533

Cited by 5 publications

(1 citation statement)

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“…GaN/AlN superlattices (SLs) have been considered for high-performance photonic devices operating throughout the ultraviolet, visible, and infrared optical regions [1][2][3]. Among other factors such as growth conditions and design parameters, the structural and consequently optical properties of these SLs are strongly influenced by both the substrate type and the strain in the SLs.…”

Section: Introductionmentioning

confidence: 99%

The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

Kuchuk¹,

Kryvyi²,

Lytvyn³

et al. 2017

Nano Online

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Superlattices (SLs) consisting of symmetric layers of GaN and AlN have been investigated. Detailed X-ray diffraction and reflectivity measurements demonstrate that the relaxation of built-up strain in the films generally increases with an increasing number of repetitions; however, an apparent relaxation for subcritical thickness SLs is explained through the accumulation of Nagai tilt at each interface of the SL. Additional atomic force microscopy measurements reveal surface pit densities which appear to correlate with the amount of residual strain in the films along with the appearance of cracks for SLs which have exceeded the critical thickness for plastic relaxation. These results indicate a total SL thickness beyond which growth may be limited for the formation of high-quality coherent crystal structures; however, they may indicate a growth window for the reduction of threading dislocations by controlled relaxation of the epilayers.

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Section: Introductionmentioning

confidence: 99%

The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

Kuchuk¹,

Kryvyi²,

Lytvyn³

et al. 2017

Nano Online

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Insight into photon conversion of Nd³⁺ doped low temperature grown p and n type tin oxide thin films

et al. 2016

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Mechanism and crucial parameters on GaN nanocluster formation in a silica matrix

Kioseoglou

Katsikini

Termentzidis

et al. 2017

Journal of Applied Physics

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The formation of wurtzite GaN nanoclusters in an amorphous silica matrix, via gallium and nitrogen ion implantation and rapid thermal annealing, is identified using Extended X Ray Absorption Fine Structure analysis. The mechanism and the crucial parameters that rule the formation of the nanoclusters are established by the use of molecular dynamics simulations. The dominant structural parameters are found to be the concentration of the silicon and oxygen vacancies that are formed during the implantation and the annealing temperature. It is concluded that annealing at 1400 K and 8% Ga/Si and 12% N/O ratios are needed for the formation of GaN nanoclusters. In addition to that, the GaN nanocluster formation is accomplished only when the vacancy concentrations of silicon and oxygen atoms are equal to 10% and 20%, respectively. Finally, the observation of various snapshots upon an increase of the annealing duration indicates the coalescence of smaller GaN nuclei towards larger ones, designating that the Ostwald ripening is a dominant mechanism.

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Infrared emitters made from III-nitride semiconductors

Cited by 5 publications

References 156 publications

The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

Insight into photon conversion of Nd³⁺ doped low temperature grown p and n type tin oxide thin films

Mechanism and crucial parameters on GaN nanocluster formation in a silica matrix

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Infrared emitters made from III-nitride semiconductors

Cited by 5 publications

References 156 publications

The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study

Insight into photon conversion of Nd3+ doped low temperature grown p and n type tin oxide thin films

Mechanism and crucial parameters on GaN nanocluster formation in a silica matrix

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Insight into photon conversion of Nd³⁺ doped low temperature grown p and n type tin oxide thin films