CuInSe2 Thin Film Prepared by Evaporation of Cu2Se and In2Se3

Ashida, Atsushi; Hachiuma, Yoshio; Yamamoto, Nobuyuki; Itô, Taichiro; Cho, Yoshio

doi:10.7567/jjaps.32s3.84

Cited by 7 publications

(5 citation statements)

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“…Techniques used to deposit CuInSe 2 included coevaporation, 5 flash evaporation, 6 chemical vapor deposition, 7 chemical spray pyrolysis, 8,9 chemical synthesis, 10 electrochemical codeposition, 11−13 and pulse electrodeposition. 14,15 Selenization of sputtered, 16 evaporated, 5 or electrodeposited 17 Cu and In stacked layers, or alloys, have also been carried out.…”

Section: ■ Introductionmentioning

confidence: 99%

Electrodeposition of CuInSe₂(CIS) via Electrochemical Atomic Layer Deposition (E-ALD)

et al. 2012

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The growth of stoichiometric CuInSe(2) (CIS) on Au substrates using electrochemical atomic layer deposition (E-ALD) is reported here. Parameters for a ternary E-ALD cycle were investigated and included potentials, step sequence, solution compositions and timing. CIS was also grown by combining cycles for two binary compounds, InSe and Cu(2)Se, using a superlattice sequence. The formation, composition, and crystal structure of each are discussed. Stoichiometric CIS samples were formed using the superlattice sequence by performing 25 periods, each consisting of 3 cycles of InSe and 1 cycle of Cu(2)Se. The deposits were grown using 0.14, -0.7, and -0.65 V for Cu, In, and Se precursor solutions, respectively. XRD patterns displayed peaks consistent with the chalcopyrite phase of CIS, for the as-deposited samples, with the (112) reflection as the most prominent. AFM images of deposits suggested conformal deposition, when compared with corresponding image of the Au on glass substrate.

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Section: ■ Introductionmentioning

confidence: 99%

Electrodeposition of CuInSe₂(CIS) via Electrochemical Atomic Layer Deposition (E-ALD)

et al. 2012

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“…However, reports of the electrodeposition of Cu 2 Se have been few, and have generally involved postelectrodeposition annealing or high temperature electrodeposition to produce the compound. CIS has also been formed by sequential evaporation and heat treatment of In 2 Se 3 and Cu 2 Se layers [8][9][10][11][12][13][14][15] . Cu 2 Se has been formed by co-deposition [16][17][18][19] and has also been reported to deposit with CuInSe 2 during electrodeposition 20,21 , and it has also been used as a precursor for the formation of CIS.…”

Section: Introductionmentioning

confidence: 99%

Electrodeposition of CU₂SE thin films by Electrochemical Atomic Layer Epitaxy (EC-ALE).

et al. 2002

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Electrochemical atomic-layer epitaxy (EC-ALE) is an approach to electrodepositing thin-films of compound semiconductors. It takes advantage of underpotential deposition (UPD), deposition of a surface limited amount (a monolayer or less) of an element at a potential less negative than bulk deposition, to form a thin-film of a compound--one atomic layer at a time. Ideally, the 2-D growth mode should promote epitaxial deposition.

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“…The Cu(In, Ga)Se 2 ͑CIGS͒ absorber layer in a recent record-efficiency CIGS solar cell 1 has a ͑220͒/͑204͒ preferred orientation, 2 while most of the polycrystalline CIGS films reported tend to grow with a preferred ͑112͒ texture. [3][4][5][6] Although many explanations for the exceptional device performance are possible, the effect of the ͑220͒/͑204͒ orientation on the resulting CIGS material properties is not clear. Hence epitaxial growth and characterization of CIGS in the ͑220͒/͑204͒ orientation is of great interest for developing an improved understanding of basic CIGS material properties.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of Cu(In, Ga)Se2 on GaAs(110)

Liao

Rockett

2002

Journal of Applied Physics

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Epitaxial Cu(In, Ga)Se 2 ͑CIGS͒ films were grown on ͑110͒-oriented GaAs substrates using a hybrid sputtering and evaporation process. The morphological and structural properties were determined by scanning electron microscopy, atomic force microscopy, x-ray diffraction, and electron backscatter diffraction. Pronounced faceting was observed on the surfaces of the films and Ga diffusion was observed at higher growth temperatures from the substrates into the films. The ͑220͒/͑204͒ surface of CIGS was found to be unstable under the growth conditions. The resulting surface consists entirely of ͕112͖ type facets with no observable ͑220͒/͑204͒-oriented surfaces. The epitaxial temperature for the ͑220͒/͑204͒ layers is considerably lower than that on any other surface tested and is attributed to the reduced diffusion distance required for adatoms to reach growth sites. The surface is proposed to grow by rapid nucleation and gradual growth of Se terminated steps across Se terminated surface terraces. This causes the Se-terminated terraces to be rough and leaves the metal-terminated terraces, on which nucleation is slow, relatively smooth.

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CuInSe₂ Thin Film Prepared by Evaporation of Cu₂Se and In₂Se₃

Cited by 7 publications

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Electrodeposition of CuInSe₂(CIS) via Electrochemical Atomic Layer Deposition (E-ALD)

Electrodeposition of CuInSe₂(CIS) via Electrochemical Atomic Layer Deposition (E-ALD)

Electrodeposition of CU₂SE thin films by Electrochemical Atomic Layer Epitaxy (EC-ALE).

Epitaxial growth of Cu(In, Ga)Se2 on GaAs(110)

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CuInSe2 Thin Film Prepared by Evaporation of Cu2Se and In2Se3

Cited by 7 publications

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Electrodeposition of CuInSe2(CIS) via Electrochemical Atomic Layer Deposition (E-ALD)

Electrodeposition of CuInSe2(CIS) via Electrochemical Atomic Layer Deposition (E-ALD)

Electrodeposition of CU2SE thin films by Electrochemical Atomic Layer Epitaxy (EC-ALE).

Epitaxial growth of Cu(In, Ga)Se2 on GaAs(110)

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CuInSe₂ Thin Film Prepared by Evaporation of Cu₂Se and In₂Se₃

Electrodeposition of CuInSe₂(CIS) via Electrochemical Atomic Layer Deposition (E-ALD)

Electrodeposition of CuInSe₂(CIS) via Electrochemical Atomic Layer Deposition (E-ALD)

Electrodeposition of CU₂SE thin films by Electrochemical Atomic Layer Epitaxy (EC-ALE).