Epitaxial growth of Cu(In, Ga)Se2 on GaAs(110)

Liao, Dongxiang; Rockett, Angus

doi:10.1063/1.1434549

Cited by 91 publications

(61 citation statements)

References 26 publications

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“…Epitaxial CuInSe 2 thin films were grown on GaAs single crystal substrates using a hybrid sputtering and evaporation deposition technique [15]. Substrates were (100) GaAs cut to approximately 1 cm wide and 3 cm long.…”

Section: Methodsmentioning

confidence: 99%

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films

2009

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The role of intrinsic point defects on radiative recombination in Cu(In,Ga)Se 2 thin films was investigated by photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies. Experiments were performed on device-grade polycrystalline layers and single crystal thin films. PL transitions identified by others as indicating a shallow state with an ionization energy of ~16 meV is proposed to be a transition into band tail states rather than a distinct shallow defect.

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Section: Methodsmentioning

confidence: 99%

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films

2009

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“…Stability of the polar (112) and (112) CuInSe 2 facets is also evident experimentally. Spontaneous decomposition of the (110) surface into (112)/(112) polar facets has been observed during epitaxial growth [21]. It is possible that this defect-induced stabilization mechanism is of general relevance to systems containing two cation species with different formal oxidation states such as compounds of the A I B III X VI 2 family.…”

Section: Introductionmentioning

confidence: 99%

Surface morphology ofCuFeS2: The stability of the polar(112)/(112¯)surface pa

et al. 2015

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The reconstruction and energetics for a range of chalcopyrite (CuFeS 2 ) surfaces have been investigated using hybrid-exchange density functional theory. The stable nonpolar surfaces in increasing order of surface energy are (110), (102), and (114). In addition, the polar (112)/(112) surface pair was found to be remarkably stable with a surface formation energy that is only slightly higher than that of the (110) surface. The stability of (112)/(112) can be attributed to a combination of geometric and electronic mechanisms that result in the suppression of the electrostatic dipole perpendicular to the surface. Defect formation is a third mechanism that can further stabilize the (112)/(112) surface pair to an extent that it is thermodynamically preferred over the (110) surface. The stability of (112)/(112) means that regardless of the growth conditions, (112) and (112) facets are expected to have a significant presence in the surface morphology of CuFeS 2 .

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“…[7][8][9][10] Recent works on CIGS have achieved the power conversion efficiency up to 22.6% in laboratory scale. 11 The CIGS thin films have been synthesized by various methods; some of those techniques were sputtering, 12 spray pyrolysis, 13 chemical bath deposition, 14 flash evaporation, 15 hybrid sputtering, 16 molecular beam epitaxy (MBE), 17 co-evaporation 18,19 and some other modified techniques. [20][21][22][23] These synthesis methods need larger investment in machinery and workspace which involve highly complicated instruments.…”

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confidence: 99%

Electrochemical Atomic Layer Deposition of CuIn_(1-x)Ga_xSe₂on Mo Substrate

Ramasamy¹,

Jung²,

Yeon³

et al. 2017

J. Electrochem. Soc.

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The chalcopyrite CuIn (1-x) Ga x Se 2 (CIGS) thin films were grown on Mo substrate by electrochemical atomic layer deposition (E-ALD) of superlattice sequencing 2InSe/2GaSe/1CuSe, recently developed on model Au surface by Stickney and coworkers (J. Electrochem. Soc. 161, D141 (2014)). The cyclic voltammetry studies were conducted on copper, selenium, indium and gallium on molybdenum substrate and CIGS films were grown by different numbers of superlattice sequencing. The deposited films were examined for phase and microstructure formations by X-ray diffraction (XRD), scanning electron microscopy (SEM), scanning tunneling microscopy (STM) and energy dispersive spectroscopy (EDS). The XRD pattern corresponded to those of chalcopyrite crystalline phase of CIGS and the crystallite size increased with the number of cycles or periods of whole superlattice sequencing increased. The SEM and STM results were in line with those of XRD by showing that the particle size increased as the number of E-ALD cycles increased. The EDS results revealed the CIGS with near stoichiometry. Finally, the deposited E-ALD films were shown to be photoelectrochemically active with p-type conductivity. We wish to describe the preparation of CuIn (1-x) Ga x Se 2 (CIGS) by means of electrochemical atomic layer deposition (E-ALD) on Mo substrate of each component element in aqueous solutions at ambient laboratory conditions and to show that the resulting films are photoelectrochemically active with p-type conductivity.Solar energy, the prominent energy source of the universe could be properly utilized for the current increasing trends for energy needs of our entire planet. Alternate energy production technologies like thin film solar cells have been successfully competing traditional energy production methods raised over recent years.1-3 The chalcopyrite Cu(In,Ga)(Se/S) 2 modules of thin films are the promising tool in commercially manufacturing thin film photovoltaic (PV) technologies available in PV market today. 4 The chalcopyrites CIGS are compound semiconductors which are largely known for high absorption coefficient (1 × 10 5 cm −1 ) at photons above the bandgap. 5 The Ga substitution can make the compound with highly adjustable bandgap (1.04 eV for CuInSe 2 (x = 0) to 1.68 eV for CuGaSe 2 (x = 1)) 6 with high stability under high energy irradiation. 7,8 The bandgap of the material is more closely found with the optimum conversion efficiency range (1.4 ∼ 1.5 eV) of solar radiation.9 Because of these properties, it attracted considerable interests by the researchers and industrialists to use CIGS as light-absorbing materials for thin film photovoltaic cells.7-10 Recent works on CIGS have achieved the power conversion efficiency up to 22.6% in laboratory scale. [20][21][22][23] These synthesis methods need larger investment in machinery and workspace which involve highly complicated instruments. The difficulties are with the problems in maintaining the laboratory conditions, complicated procedures and unusual release of heat and toxic byprod...

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Epitaxial growth of Cu(In, Ga)Se2 on GaAs(110)

Cited by 91 publications

References 26 publications

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films

Surface morphology ofCuFeS2: The stability of the polar(112)/(112¯)surface pa

Electrochemical Atomic Layer Deposition of CuIn_(1-x)Ga_xSe₂on Mo Substrate

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Epitaxial growth of Cu(In, Ga)Se2 on GaAs(110)

Cited by 91 publications

References 26 publications

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se2Thin Films

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se2Thin Films

Surface morphology ofCuFeS2: The stability of the polar(112)/(112¯)surface pa

Electrochemical Atomic Layer Deposition of CuIn(1-x)GaxSe2on Mo Substrate

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Product

Resources

About

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films

Photoluminescence and Photoluminescence Excitation Spectroscopy of Cu(In,Ga)Se₂Thin Films

Electrochemical Atomic Layer Deposition of CuIn_(1-x)Ga_xSe₂on Mo Substrate