Cu Bottom-Up Filling for Through Silicon Vias with Growing Surface Established by the Modulation of Leveler and Suppressor

Kim, Myung Joon; Kim, Hoe Chul; Choe, Senyon; Cho, Ji Yoon; Lee, Dong‐Hyung; Jung, Il Woong; Cho, Won-Seob; Kim, Jae Jeong

doi:10.1149/2.037312jes

Cited by 51 publications

(54 citation statements)

References 36 publications

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“…30 Moreover, L1, consisting of pyridine with amine functional group, was synthesized as the leveler. 30 In this study, the molecular structures of the additives were modified; S1 was composed of polyoxy polymer having hydroxyl groups at both sides, with an average molecular weight between 2,000 ∼ 3,000. L2, a kind of pyridine derivative, contained hydroxyl groups instead of amine group.…”

Section: Methodsmentioning

confidence: 99%

“…30 The trenches were perfectly filled by the galvanostatic electrodeposition with three components of additives: SPS, chemically synthesized suppressor and leveler. The co-adsorption of the suppressor and leveler on the top of the trenches severely inhibited Cu deposition at the top and lateral * Electrochemical Society Student Member.…”

Section: -29mentioning

confidence: 99%

“…Previously S1, a type of polyoxy polymer with amine terminal groups at both sides and with an average molecular weight between 3,000 and 4,000, was used as the suppressor. 30 Moreover, L1, consisting of pyridine with amine functional group, was synthesized as the leveler. 30 In this study, the molecular structures of the additives were modified; S1 was composed of polyoxy polymer having hydroxyl groups at both sides, with an average molecular weight between 2,000 ∼ 3,000.…”

mentioning

confidence: 99%

“…[27][28][29] Previously, we reported an extreme bottom-up filling of the trenches with similar dimensions to those of the TSVs. 30 The trenches were perfectly filled by the galvanostatic electrodeposition with three components of additives: SPS, chemically synthesized suppressor and leveler. The co-adsorption of the suppressor and leveler on the top of the trenches severely inhibited Cu deposition at the top and lateral walls near the top.…”

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Bottom-up Filling of through Silicon Vias Using Galvanostatic Cu Electrodeposition with the Modified Organic Additives

Kim

Choe

Cho

et al. 2014

J. Electrochem. Soc.

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The chemically synthesized suppressor and leveler are added together with bis(3-sulfopropyl)disulfide (SPS) to galvanostatically fill up the trenches with the similar dimensions to those of the through silicon vias. In our previous study, the deposition of the coarse-grained Cu was indicated as a drawback of the synthesized additives, i.e., polyoxy polymer with amine terminal groups and pyridine derivatives containing additional amine groups. In this study, the modified chemistry of organic additives is used, enabling the bottom-up filling of trenches and improving the microstructure of the deposited Cu. The conversion of the functional groups from amine to hydroxyl groups in both the suppressor and leveler, and the uniform adsorption of modified suppressor improved the microstructure of the deposited Cu. The void-free trench filling is induced by the selective adsorption and accumulation of SPS at the bottom and negligible deposition on the top and side-walls of the trenches. Based on the filling mechanism, the trenches with 9 μm width and 50 μm depth are galvanostatically filled in ≤20 min. Intensive researches have been focused on the fabrication of 3-dimensional (3D) interconnection among electronic devices to achieve a high-density integration and multifunctional single device.1-3 The metallization of through silicon vias (TSVs), one of a promising technology for the 3D packaging, is expected to enhance the operation speed and performance of the microelectronic devices.4-8 A void-free filling of the TSVs by Cu electrodeposition with proper organic additives chemistry has been actively investigated to reduce processing time. 9-11A concentration gradient of suppressing agent, high at the via top while decreasing gradually toward the via bottom, typically induces a bottom-up via filling. The Cu deposit according to the filling time typically reveals a V-shaped profile reflecting the gradient of additive coverage. [12][13][14] Recently, an extreme bottom-up filling of the vias was achieved using one component of additive, suppressor, resulting in a clearly flat filling profile rather than the V-shape. 15,16 Based on the previous results, L. Yang et al. reported that the difference in the adsorption density of suppressing agents between the via top and bottom was required for a void-free bottom-up filling. 17Moreover, the accumulation of accelerator at the bottom of the via was also highlighted in understanding the filling mechanism. In the case of recessed features with submicrometer dimensions, accelerators including bis(3-sulfopropyl)disulfide (SPS) promoted copper deposition, enabling the superconformal filling in the combination with suppressors, based on a curvature-enhanced-accelerator coverage (CEAC) mechanism.18-26 However, the same additive composition or deposition method used in the CEAC model itself mostly failed in the void-free filling of the TSVs. Therefore, additional steps including the selective deactivation of the adsorbed SPS on the top of the vias were introduced to improve the filling perf...

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Section: Methodsmentioning

confidence: 99%

Section: -29mentioning

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Bottom-up Filling of through Silicon Vias Using Galvanostatic Cu Electrodeposition with the Modified Organic Additives

Kim

Choe

Cho

et al. 2014

J. Electrochem. Soc.

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“…11,12) Therefore, an alternative plating process employing a plating solution which has lower additive concentration has been studied. [11][12][13][14][15][16][17] The objective of this study is to nd optimum leveler concentration to ll via without using accelerator and suppressor. In this study, accelerator and suppressor were not added to reduce the concentration of organic additives.…”

Section: Introductionmentioning

confidence: 99%