Cryogenic Operation of Silicon Power Devices

Singh, Ranbir; Baliga, B. Jayant

doi:10.1007/978-1-4615-5751-7

Cited by 35 publications

(13 citation statements)

References 80 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A comprehensive characterization of a variety of power devices was undertaken in the 1990s at the Power Semiconductor Research Center at temperatures down to liquid nitrogen (77 K) [95]. This range was selected for potential use of the power electronics with high-temperature superconductors.…”

Section: Cryogenic Power Electronicssupporting

confidence: 41%

See 1 more Smart Citation

IGBT Applications

Baliga

2015

The IGBT Device

Self Cite

View full text Add to dashboard Cite

Section: Cryogenic Power Electronicssupporting

confidence: 41%

“…Ohmic heating provides more uniform heating with better efficiency. A light weight and compact ohmic food warming unit has been reported for replacing the convection ovens [95].…”

Section: Manned Interplanetary Missionsmentioning

confidence: 41%

IGBT Applications

Baliga

2015

The IGBT Device

Self Cite

View full text Add to dashboard Cite

“…Previously, the performance of both unipolar and bipolar Si power devices have been measured and modelled down at cryogenic temperatures [3,4]. Significant research has been conducted on the performance of SiC devices at high temperatures [5], though very little has been reported [6][7][8] of the operation of SiC devices at cryogenic temperatures.…”

Section: Introductionsupporting

confidence: 42%

Cryogenic Characterization of Commercial SiC Power MOSFETs

Chen

Gammon

Shah

et al. 2015

MSF

View full text Add to dashboard Cite

Abstract. The cryogenic performance of two commercially available SiC power MOSFETs are presented in this work. The devices are characterised in static and dynamic tests at 10 K intervals from 20-320 K. Static current-voltage characterisation indicates that at low temperatures threshold voltage, turn-on voltage, on-state resistance, transconductance, and the body diode turn-on voltage all increase while saturation current decreases. Dynamic, 60 V, 3A switching tests within the cryogenic chamber are also reported and the trends of switching speed, losses, and total power losses, which rise at low temperature, are presented. Overall, both MOSFETs are fully operable down to 20 K with both positive and negative changes in behaviour.

show abstract

“…As junction temperature T j increases, the trans-conductance g m decreases while the resultant current gain α pnp [28] and electron concentration n drl increase [29]. Further, ΔJ ch reduces as the T j increases under fixed V dc and I L .…”

Section: Duration δT 3 Dependence Analysismentioning

confidence: 99%

Junction Temperature Extraction Approach with Turn-off Delay Time for High-voltage High-Power IGBT Modules

Luo

Chen

Sun

et al. 2015

IEEE Trans. Power Electron.

162

View full text Add to dashboard Cite

Abstract -Thermo-sensitive electrical parameter (TSEP) approaches are widely employed in the junction temperature extraction and prediction of power semiconductor devices. In this paper, the turn-off delay time is explored as an indicator of a TSEP to extract the junction temperature from high power insulated gate bipolar transistor (IGBT) modules. The parasitic inductor L eE between the Kelvin and power emitter terminals of an IGBT module is utilized to extract the turn-off delay time. Furthermore, the monotonic dependence between the junction temperature and turn-off delay time is investigated. The beginning and end point of the turn-off delay time can be determined by monitoring the induced voltage v eE across the inductor L eE . A dynamic switching characteristic test platform for high power IGBT modules is used to experimentally verify the theoretical analysis. The experimental results show that the dependency between IGBT junction temperature and turn-off delay time is near linear. It is established that the turn-off delay time is a viable TSEP with good linearity, fixed sensitivity and offers non-destruction on-line IGBT junction temperature extraction.Index Terms -Thermo-sensitive electrical parameter, high power IGBTs, on-line junction temperature extraction, turn-off delay time. I.0885-8993 (c) . His research interests include high power devices, advanced power converters and operation optimization for renewable energy based power systems. Dr. Li has published more than 100 peer-reviewed technical papers and holds over 30 issued/pending patents.Due to his excellent teaching and research contributions, Dr.

show abstract

Cryogenic Operation of Silicon Power Devices

Cited by 35 publications

References 80 publications

IGBT Applications

IGBT Applications

Cryogenic Characterization of Commercial SiC Power MOSFETs

Junction Temperature Extraction Approach with Turn-off Delay Time for High-voltage High-Power IGBT Modules

Contact Info

Product

Resources

About