Crosstalk analysis for a CMOS gate driven inductively and capacitively coupled interconnects

Kaushik, Brajesh Kumar; Sarkar, S.

doi:10.1016/j.mejo.2008.03.015

Cited by 39 publications

(30 citation statements)

References 12 publications

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“…For all calculation and simulation purposes, the data shown in Table 1 have been used. 20,21,38,39 The result also illustrates that coupled copper interconnects have comparatively lower crosstalk-induced positive noise voltage peaks because of the control of its smaller self-inductance (L s ) and a larger ground capacitance (C g ) compared with MLGNR. These results show the significant reflection of temperature variation on interconnect resistance (see Figures 4 and 5).…”

Section: Crosstalk Analysismentioning

confidence: 84%

“…20,34,35,38,39 It is also reported that, 20,21 with advancement of technologies, the resistance of interconnect increases because of strong alteration of temperature-dependent scattering on the MFP. 20,34,35,38,39 It is also reported that, 20,21 with advancement of technologies, the resistance of interconnect increases because of strong alteration of temperature-dependent scattering on the MFP.…”

Section: Crosstalk Analysismentioning

confidence: 99%

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Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

Kumar

Arora

Kaushik

2017

Circuit Theory & Apps

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The temperature-dependent circuit modeling and performance in terms of propagation delay, power dissipation, and crosstalk-induced voltage waveform at the far end of victim line of multilayer graphene nanoribbon (MLGNR) interconnects have been analyzed at 22 nm technology node. A comparative performance analysis between MLGNR interconnects with resistance estimated using temperature-dependent model and temperature-independent model is examined. The results obtained are also compared with capacitively coupled interconnects of copper (Cu). The results show that as the temperature is varied from 300 K to 500 K, MLGNR has lower propagation delay and power dissipation as compared to Cu for 1 mm long interconnects. It is also observed that because of the dominance of both low resistance and ground capacitance compared to Cu, MLGNR has better crosstalk-induced delay and voltage waveforms with rise in temperature at the far end of aggressor and victim line, respectively. Further, simulated results show an average relative improvement in propagation delay of 37.24% and corresponding improvement in power dissipation of approximately 19.59% by using a temperature-dependent model in comparison to a temperature-independent model of MLGNR resistance with interconnect lengths varying from 200 to 1000 μm. The reduction in the time duration of victim output pulse over these interconnect lengths also shows a significant improvement of approximately 35% by using temperature-dependent model as against temperature-independent model of MLGNR resistance.

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Section: Crosstalk Analysismentioning

confidence: 84%

Section: Crosstalk Analysismentioning

confidence: 99%

Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

Kumar

Arora

Kaushik

2017

Circuit Theory & Apps

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“…7(c). The parameter is obtained as (11) The differential equation describing the voltage at the node 2 is (12) The solution of this differential equation leads to the voltage . For much smaller than , the solution is (13) In Fig.…”

Section: Analytical Model For Single Event Crosstalkmentioning

confidence: 99%

“…Therefore crosstalk effects between interconnecting wires should be considered in the early stages of the Manuscript today chip design flow and signal integrity [7]- [10]. Predicting accurately the crosstalk waveform shape and peak noise in a driver-interconnect load system has been an important design concern [11]. Previously many researchers have proposed some models for predicting the crosstalk noise [7]- [10], [11]- [17].…”

Section: Introductionmentioning

confidence: 99%

“…Predicting accurately the crosstalk waveform shape and peak noise in a driver-interconnect load system has been an important design concern [11]. Previously many researchers have proposed some models for predicting the crosstalk noise [7]- [10], [11]- [17]. The crosstalk noise between interconnects might cause a SET pulse to affect electronically unrelated multiple logic paths instead of the single hit path.…”

Section: Introductionmentioning

confidence: 99%

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Accurate Analytical Model for Single Event (SE) Crosstalk

Liu

Cai

Zhu

2012

IEEE Trans. Nucl. Sci.

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With advances in modern technology, circuits become more sensitive to single event transient (SET) due to decreased device feature size and increased coupling effects among interconnects, which might cause SET to affect multiple logic paths. This paper proposed an accurate and efficient SE crosstalk estimation model based on point admittance and equivalent circuit of SET. The proposed model uses a 6-node template circuit of interconnect and simplifies the calculation by use of point admittance. By use of Taylor series expansion theorem, the analytical expressions of noise peak voltage and pulse width are obtained. The waveform of SE crosstalk in the analytical model is very good in agreement with SPICE. Results from 1000 random cases show that by comparison with previous works, the model has a significant improved accuracy with an average error of only 3.07% in noise peak voltage, and 8.11% in pulse width, respectively. These results validate that the analytical model is efficient and accurate.

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Temperature dependant crosstalk analysis in coupled single‐walled carbon nanotube (SWCNT) bundle interconnects

Kumar

Sarkar

2014

Circuit Theory & Apps

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The temperature‐dependent, crosstalk‐induced, noise voltage waveform and its frequency spectrum, in capacitive coupled single‐walled carbon nanotube (SWCNT) bundle interconnects, at the far end of victim line, have been analyzed at 22‐nm technology node. A similar analysis is performed for copper interconnects and a comparison is made between the results of these two analyses. The SPICE simulation results reveal that at temperature variations ranging from 300 to 500 K, compared with conventional metal (copper) conductors, crosstalk noise voltage levels in CNT, at the far end of victim line, are significantly low. Simulated results further reveal that, with rise in interconnect temperatures, compared with copper interconnects, coupled interconnects of SWCNT bundle filter more noise frequency components. Based on these comparative results, an improved model for extracting inter‐bundle, real life, coupling capacitances between SWCNT bundles has been proposed. Copyright © 2014 John Wiley & Sons, Ltd.

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Crosstalk analysis for a CMOS gate driven inductively and capacitively coupled interconnects

Cited by 39 publications

References 12 publications

Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

Temperature‐dependent modeling and performance analysis of coupled MLGNR interconnects

Accurate Analytical Model for Single Event (SE) Crosstalk

Temperature dependant crosstalk analysis in coupled single‐walled carbon nanotube (SWCNT) bundle interconnects

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