Accurate Analytical Model for Single Event (SE) Crosstalk

Abstract

With advances in modern technology, circuits become more sensitive to single event transient (SET) due to decreased device feature size and increased coupling effects among interconnects, which might cause SET to affect multiple logic paths. This paper proposed an accurate and efficient SE crosstalk estimation model based on point admittance and equivalent circuit of SET. The proposed model uses a 6-node template circuit of interconnect and simplifies the calculation by use of point admittance. By use of Taylor series expansion theorem, the analytical expressions of noise peak voltage and pulse width are obtained. The waveform of SE crosstalk in the analytical model is very good in agreement with SPICE. Results from 1000 random cases show that by comparison with previous works, the model has a significant improved accuracy with an average error of only 3.07% in noise peak voltage, and 8.11% in pulse width, respectively. These results validate that the analytical model is efficient and accurate.

Effect of temperature and single event transient on crosstalk in coupled single‐walled carbon nanotube (SWCNT) bundle interconnects

“…Therefore, it is desirable for quick SPICE simulation to introduce a transient current source at the sensitive circuit node, such as the depletion region of transistor drains or a reverse-biased p-n junction, to model particle strike. 9,10,24 The transient current source is proposed by a double exponential function as 8,10,24…”

“…The equivalent SEC circuit model for three line coupled SWCNT bundle interconnects onto the output node, and R s is the effective resistance of the pull-up path or pull-down path. 8,10,26 In practice, due to different equivalent resistance and capacitance values for linear and saturation regions of operation of MOS transistors, nonlinear CMOS driver gate, appropriation modeled as resistive and capacitive elements, gives rises to an inaccurate output. [27][28][29] This can be understood by noting that during the transition time the transistor operates in both the linear and saturation regions.…”

“…[1][2][3][4][5][6][7] Advances in modern electrical technology scaling down cause decreasing space and increasing thickness to width ratio of interconnects, which contribute to increase the crosstalk effect among the lines. [8][9][10][11][12] As device feature size reduces to nanometer scale, single event transient (SET), which is induced by an energetic radiation particle striking the sensitive area of a device or circuit, might impact electronically unrelated multiple logic paths due to the crosstalk effect. This has become a major threaten for the reliability of modern integrated circuits.…”

“…Some works for SEC in copper interconnects have been performed. [8][9][10] However, till date, no study has been made to discuss the thermally crosstalk of SWCNT interconnects with single event transient.…”