Creation of Indium Arsenide Nanocrystallites in Silicon by Ion Implantation

Komarov, F. F.; Власукова, Л. А.; Milchanin, O.; Grechnyi, S.; Мудрый, А. В.; Ivaniukovich, A; Wesch, W.; Kamarou, A.

doi:10.1142/9789812770950_0098

Cited by 6 publications

(11 citation statements)

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“…We attribute them to LO-phonon scattering on crystalline InSb [1]. A similar band was observed earlier in the PL spectra of silicon samples with embedded (As + In) nanocrystals grown on Si wafers by MBE [2] or synthesized by high-fluence ion implantation of (As + In) [3,4] and (Sb + Ga) [5] into Si. That band was ascribed to InAs and GaSb nanocrystals, correspondingly.…”

Section: Resultssupporting

confidence: 73%

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OPTICAL PROPERTIES OF SILICON LAYERS WITH InSb AND InAs NANOCRYSTALS FORMED BY ION-BEAM SYNTHESIS

Komarov

Власукова

Greben

et al. 2013

Physics, Chemistry and Applications of Nanostructures

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We have studied the formation of InSb and InAs precipitates with sizes of several nanometers in Si and SiO 2 /Si by means of implantation of (Sb + In) or (As + In) ions with energies from 170 to 350 keV and fluencies from 2.8×10 16 to 3.5×10 16 cm -2 at 500 °C and subsequent annealing at 1050-1100 °C for 3-30 min. A broad band in the region of 1.2-1.6 µm has been registered in the low-temperature photoluminescence spectra of both (Sb + In) and (As + In) implanted and annealed silicon crystals.

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Section: Resultssupporting

confidence: 73%

“…For all the examined samples a broad band in the region of 1.2-1.6 µm is registered in PL spectra. A few mechanisms may contribute to this band including dislocation-like PL [6], quantum confinement effect for A 3 B 5 nanocrystals in silicon [2,4] as well as donor-acceptor recombination [4].…”

Section: Resultsmentioning

confidence: 99%

OPTICAL PROPERTIES OF SILICON LAYERS WITH InSb AND InAs NANOCRYSTALS FORMED BY ION-BEAM SYNTHESIS

Komarov

Власукова

Greben

et al. 2013

Physics, Chemistry and Applications of Nanostructures

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“…These calculations do not take into account the implantation temperature. Therefore, the simulated results are close to experimental depth proles of implanted species for room temperature implantation [10] only. The depth proles were calculated from RBS spectra by tting of the spectra using HEAD code until the simulated spectra coincided completely with the experimental spectra.…”

Section: Methodssupporting

confidence: 71%

Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions

et al. 2014

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Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high uence ion implantation at 500• C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 9001100 • C. Rutherford backscattering spectrometry, transmission electron microscopy/ transmission electron diraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two dierent types of the broad band emission extending over 0.751.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100 • C unlike the other one.

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“…Synthesis of direct gap III-V and II-VI semiconductors in a sili con matrix is viewed as a promising technology of new generation silicon detectors and LEDs. Previ ously [21][22][23][24], we discussed experimental data for the synthesis of InAs, InSb, and GaSb nanoclusters in Si and SiO 2 by high dose ion implantation and post implantation high temperature annealing. Elemental and structural analyses of the samples were carried out, and their optical characteristics were studied.…”

Section: Formation Of Inas Nanoclusters In Silicon By High Dose Ion Imentioning

confidence: 99%

Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

et al. 2015

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A physicomathematical model and dedicated software are developed for simulating high dose implantation of two types of atoms to form InAs nanoclusters in a silicon matrix. The model is based on solv ing a set of convection-diffusion-reaction equations. The synthesis of InAs nanoclusters produced by high dose implantation of As + and In + ions into crystalline silicon is numerically simulated. Using the methods of transmission electron microscopy and Raman scattering, it is found that InAs nanoclusters are crystalline and have a mean diameter of 7 nm. After As implantation (170 keV, 3.2 × 10 16 cm -2 ) and In implantation (250 keV, 2.8 × 10 16 cm -2 ) into silicon at 500°C, the nanoclusters are distributed with a density of 2.87 × 10 11 cm -2 . From experimental data and theoretical results, the coefficients of radiation stimulated diffusion of In and As in silicon, as well as the fraction of the implant in the bound state (i.e., entering into InAs nan oclusters), are determined. Experimental data are compared with simulation results.

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Creation of Indium Arsenide Nanocrystallites in Silicon by Ion Implantation

Cited by 6 publications

References 0 publications

OPTICAL PROPERTIES OF SILICON LAYERS WITH InSb AND InAs NANOCRYSTALS FORMED BY ION-BEAM SYNTHESIS

OPTICAL PROPERTIES OF SILICON LAYERS WITH InSb AND InAs NANOCRYSTALS FORMED BY ION-BEAM SYNTHESIS

Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions

Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

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