OPTICAL PROPERTIES OF SILICON LAYERS WITH InSb AND InAs NANOCRYSTALS FORMED BY ION-BEAM SYNTHESIS

Komarov, F. F.; Власукова, Л. А.; Greben, M.; Milchanin, O.; Żuk, J.; Wesch, W.; Wendler, E.; Togambaeva, A. K.

doi:10.1142/9789814460187_0020

Cited by 4 publications

(9 citation statements)

References 6 publications

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“…That suggests that sample f1 annealed with RTA at 1000 °C presents a better efficiency for the optical emission than samples f2 and f5 annealed under the same conditions. The observed PL emission is consistent with PL reported by other studies where InAs nanocrystal are synthesized in silicon by different methods and different annealing techniques were employed . At 12 K, the bandgap for a bulk InAs crystal is 0.417.…”

Section: Resultssupporting

confidence: 90%

“…Although the molecular beam epitaxy (MBE) is the most used technique to produce such nanostructures, the combination of ion implantation and thermal annealing has proved to be an interesting alternative . Indeed, ion implantation allows full control over parameters like mean depth and local concentration of the implanted species and it is fully compatible with current Si‐based technology.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, ion‐beam techniques provide a variety of possibilities for the analysis and modification of nanoparticles. Recent studies toward III–V nanocrystals in Si produced by ion implantation explore several experimental conditions . All these studies were carried out with crystalline Si grown in the (100) direction.…”

Section: Introductionmentioning

confidence: 99%

“…However, one striking difference among the experiments is the duration of the annealing process to which the samples were submitted. While most of the experiments employed annealing times of a few minutes to a few hours , one of them was carried out with so‐called flash lamp annealing (FLA) whose duration does not exceed a few tens of milliseconds . A common feature reported by these studies is a broad PL peak between 1.2 and 1.6 μm, corresponding to an energy region of 0.776–1.035 eV.…”

Section: Introductionmentioning

confidence: 99%

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Optical and structural properties of InAs nanoclusters in crystalline Si obtained through sequential ion implantation and RTA

Sortica

Canut

Hatori

et al. 2015

Physica Status Solidi (a)

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Si (100) wafers were implanted at 500 °C with 250 keV As ions and 350 keV In ions in this order. The implantations were carried out with three different fluences, namely 1 × 1016, 2 × 1016, and 5 × 1016 cm−2. The samples were annealed with rapid thermal annealing (RTA) for 30 s at temperatures ranging from 800 up to 1000 °C. Different techniques like photoluminescence (PL) and Rutherford backscattering spectrometry (RBS) were employed to characterize the samples. Finally, scanning and transmission electron microscopy (SEM and TEM, respectively) provided further structural information of the InAs nanoclusters. The results indicate that InAs nanoprecipitates are formed after RTA treatment. Moreover, a broad photoluminescence peak was observed in all samples submitted to RTA. RBS results reveal that losses of implanted ions due to diffusion processes can be minimized through the use of RTA, depending of the fluence of ion implantation. Finally, the present results suggest that the photoluminescence yield depends on the degree of the radiation damage induced in the Si matrix during the implantation process.

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Section: Resultssupporting

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Optical and structural properties of InAs nanoclusters in crystalline Si obtained through sequential ion implantation and RTA

Sortica

Canut

Hatori

et al. 2015

Physica Status Solidi (a)

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“…Synthesis of direct gap III-V and II-VI semiconductors in a sili con matrix is viewed as a promising technology of new generation silicon detectors and LEDs. Previ ously [21][22][23][24], we discussed experimental data for the synthesis of InAs, InSb, and GaSb nanoclusters in Si and SiO 2 by high dose ion implantation and post implantation high temperature annealing. Elemental and structural analyses of the samples were carried out, and their optical characteristics were studied.…”

Section: Formation Of Inas Nanoclusters In Silicon By High Dose Ion Imentioning

confidence: 99%

Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

et al. 2015

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A physicomathematical model and dedicated software are developed for simulating high dose implantation of two types of atoms to form InAs nanoclusters in a silicon matrix. The model is based on solv ing a set of convection-diffusion-reaction equations. The synthesis of InAs nanoclusters produced by high dose implantation of As + and In + ions into crystalline silicon is numerically simulated. Using the methods of transmission electron microscopy and Raman scattering, it is found that InAs nanoclusters are crystalline and have a mean diameter of 7 nm. After As implantation (170 keV, 3.2 × 10 16 cm -2 ) and In implantation (250 keV, 2.8 × 10 16 cm -2 ) into silicon at 500°C, the nanoclusters are distributed with a density of 2.87 × 10 11 cm -2 . From experimental data and theoretical results, the coefficients of radiation stimulated diffusion of In and As in silicon, as well as the fraction of the implant in the bound state (i.e., entering into InAs nan oclusters), are determined. Experimental data are compared with simulation results.

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Свойства структуры и оптических фононов в нанокристаллах InSb, синтезированных в Si и SiO-=SUB=-2-=/SUB=-

Tyschenko¹,

Чжан²

2021

Физика И Техника Полупроводников

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Интерес к созданию и изучению нанокристаллов InSb на основе кремния обусловлен необходимостью создания гибридных интегральных схем, объединяющих в себе элементы с различными функциональными свойствами. Локализация оптических фононов в кристаллах с пониженной размерностью может оказывать влияние как на оптические, так и на электрические свойства этих кристаллов. В данной работе проведен сравнительный анализ свойств оптических фононов в нанокристаллах InSb, ионно-синтезированных в решетке Si, а также в нанокристаллах InSb в пленках SiO2, созданных методами ионно-лучевого синтеза и радиочастотного магнетронного распыления. Свойства оптических фононов в нанокристаллах InSb объяснены с точки зрения влияния структурных свойств окружающей матрицы. Ключевые слова: InSb, кремний, оксид кремния, нанокристаллы, синтез.

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OPTICAL PROPERTIES OF SILICON LAYERS WITH InSb AND InAs NANOCRYSTALS FORMED BY ION-BEAM SYNTHESIS

Cited by 4 publications

References 6 publications

Optical and structural properties of InAs nanoclusters in crystalline Si obtained through sequential ion implantation and RTA

Optical and structural properties of InAs nanoclusters in crystalline Si obtained through sequential ion implantation and RTA

Formation of InAs nanoclusters in silicon by high-dose ion implantation: Experimental data and simulation results

Свойства структуры и оптических фононов в нанокристаллах InSb, синтезированных в Si и SiO-=SUB=-2-=/SUB=-

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