We have studied the formation of InSb and InAs precipitates with sizes of several nanometers in Si and SiO 2 /Si by means of implantation of (Sb + In) or (As + In) ions with energies from 170 to 350 keV and fluencies from 2.8×10 16 to 3.5×10 16 cm -2 at 500 °C and subsequent annealing at 1050-1100 °C for 3-30 min. A broad band in the region of 1.2-1.6 µm has been registered in the low-temperature photoluminescence spectra of both (Sb + In) and (As + In) implanted and annealed silicon crystals.
Compound semiconductor nanocrystals (InAs, InSb, GaSb) were successfully synthesized in single crystalline Si by high uence ion implantation at 500• C followed by high-temperature rapid thermal annealing or conventional furnace annealing at 9001100 • C. Rutherford backscattering spectrometry, transmission electron microscopy/ transmission electron diraction, Raman scattering, and photoluminescence were employed to characterize the implanted layers. Two dierent types of the broad band emission extending over 0.751.1 eV were observed in photoluminescence spectra of annealed samples. One of the bands disappears in photoluminescence spectra of samples annealed at 1100 • C unlike the other one.
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