Correlation of atomic force microscopy sidewall roughness measurements with scanning electron microscopy line-edge roughness measurements on chemically amplified resists exposed by x-ray lithography

Abstract

Articles you may be interested inAn atomic force microscopy-based method for line edge roughness measurement

Atomic force microscope caliper for critical dimension measurements of micro and nanostructures through sidewall scanning

“…M. Fouchier et al proposed a technique by tilting the sample for sidewalls imaging [26,27]. This approach is suitable for sidewall scan with a complex calibration routine [28]. Recently, a three-dimensional (3D) AFM has been developed to scan undercut sidewalls with nanometer precision [29].…”

An atomic force microscopy-based method for line edge roughness measurement

“…4,[7][8][9][10][11] In this method, a sample featuring a network of lines is cleaved along the lines. The sidewall of the line closest to the cleaved edge is then imaged using an AFM.…”

Study of the evolution of nanoscale roughness from the line edge of exposed resist to the sidewall of deep-etched InP∕InGaAsP heterostructures

“…There have been several studies on LER and SWR measurements with scanning electron microscopy (SEM) and atomic force microscopy (AFM) techniques. 17 LERs of negative and positive tone electron beam resists, and LERs of etched SiN / SiO 2 /Si waveguides were measured utilizing top-down SEM micrographs and the obtained LERs were utilized to optimize the fabrication process. 7-10 Image processing techniques and Fourier analysis techniques have been examined to improve the fidelity of LER measurements from SEM pictures.…”