Abstract:Effect of mask thickness on the nanoscale sidewall roughness and optical scattering losses of deep-etched In P ∕ In Ga As P high mesa waveguidesThe evolution of line edge roughness and sidewall roughness was monitored during the fabrication of deep-etched optical waveguides in InP / InGaAsP heterostructures. Scanning electron microscopy was used to extract line edge profiles of the electron beam exposed resist and the lifted-off NiCr metal mask. Atomic force microscopy with an ultrasharp tip was utilized to ex… Show more
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