An atomic force microscopy-based method for line edge roughness measurement

Abstract

International audienc

Low damage patterning of In0.53Ga0.47As film for its integration as n-channel in a fin metal oxide semiconductor field effect transistor architecture

“…It should be noted that the LER increase at top and bottom of the pattern is due to measurement artefacts. 20 The SiN LER before the process is of 3.5 nm and is identically transferred into the InGaAs layer during the sequence of cycles of the two-step process. It is generally admitted that during plasma etching, the hard mask LER is transferred into the underlayers.…”

Atomic force microscope caliper for critical dimension measurements of micro and nanostructures through sidewall scanning

“…Their application is limited to specialized measurements or provide low surface resolution due to comparatively big tip radius and a complex blind estimation would be required for accurate CD measurements [24,25]. M. Fouchier et al proposed a technique by tilting the sample for sidewalls imaging [26,27]. This approach is suitable for sidewall scan with a complex calibration routine [28].…”

Effective Tilting Angles for a Dual Probes AFM System to Achieve High-Precision Scanning

“…Cho et al [7] designed a novel 3D AFM, which is capable of tilting the tip before every scanning, and this kind of design can fully access the sidewall corner of the sample to reconstruct a correct scan result. Fouchier et al [8] developed a technique of measuring the roughness of a line edge by a tilted scanning stage at fixed angles. Jayanth et al [9] designed a reorientable scanning probe by integrating a particular probe, a magnetic particle, and multiple magnetic actuators, respectively.…”