Correlation between preirradiation 1/f noise and postirradiation oxide-trapped charge in MOS transistors

Scofield, John; Doerr, T.P.; Fleetwood, D.M.

doi:10.1109/23.45391

Cited by 63 publications

(24 citation statements)

References 31 publications

(16 reference statements)

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“…[8][9][10][11][12][13] Here, we estimate 1 / 0 Ϸ 10 12 to be consistent with previous work. For the device that received the N 2 post-gate-oxidation anneal ͑sample C, t ox =48 nm͒, we find N bt Ϸ 1.5ϫ 10 11 cm −2 in 1989 and N bt Ϸ 4.5ϫ 10 10 cm −2 in 2007.…”

supporting

confidence: 90%

Effects of aging on the 1∕f noise of metal-oxide-semiconductor field effect transistors

Zhou

Fleetwood

Danciu

et al. 2007

Applied Physics Letters

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Articles you may be interested inFluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor applicationInfluence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface nchannel metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 103, 044501 (2008); 10.1063/1.2844553 Effect of nitrogen incorporation on 1 / f noise performance of metal-oxide-semiconductor field effect transistors with HfSiON dielectric Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxidesemiconductor field-effect transistors with accumulated back gate J. Appl. Phys. 98, 114506 (2005); 10.1063/1.2138380Correlation between the 1 ∕ f noise parameters and the effective low-field mobility in Hf O 2 gate dielectric nchannel metal-oxide-semiconductor field-effect transistors

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supporting

confidence: 90%

Effects of aging on the 1∕f noise of metal-oxide-semiconductor field effect transistors

Zhou

Fleetwood

Danciu

et al. 2007

Applied Physics Letters

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“…The flicker 1/f noise in semiconductors and metals is usually associated with structural defects. Therefore, introduction of defects by electron, ion, gamma or X-ray irradiation normally results in increased levels of 1/f noise [2,[18][19][20]. However, as an exception to the rule, there have been a few reports when the 1/f noise decreased as a result of irradiation [24][25].…”

mentioning

confidence: 99%

Reduction of 1/f noise in graphene after electron-beam irradiation

Hossain

Rumyantsev

Shur

et al. 2013

Applied Physics Letters

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We investigated the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reveals an anomalous characteristic -it reduces with increasing concentration of defects induced by irradiation. The increased amount of structural disorder in graphene under irradiation was verified with microRaman spectroscopy. The bombardment of graphene devices with 20-keV electrons reduced the noise spectral density, S I /I 2 (I is the source-drain current) by an order-of magnitude at the radiation dose of 10 4 C/cm 2 . Our theoretical considerations suggest that the observed noise reduction after irradiation can be more readily explained if the mechanism of 1/f noise in graphene is related to the electron-mobility fluctuations. The obtained results are important for the proposed graphene applications in analog, mixed-signal and radio-frequency systems, integrated circuit interconnects and sensors.Noise Suppression in Graphene, UCR -RPI -Ioffe (2012) 3The level of the flicker 1/f noise [1] is one of the key metrics that each new material has to pass before it can be used for practical devices (f is the frequency) [2]. Graphene [3] has shown a great potential for applications in high-frequency communications [4][5], analog circuits [6] and sensors [7][8]. The envisioned applications require a low level of 1/f noise, which contributes to the phase-noise of communication systems [2] and limits the sensor sensitivity [7]. Despite significant research efforts [9][10][11][12][13][14][15] there is still no conventionally accepted model for physical mechanisms behind 1/f noise in graphene. Correspondingly, no comprehensive methods for 1/f noise suppression in graphene devices have been developed.In this Letter we show that 1/f noise in graphene reveals an anomalous characteristic -it reduces with increasing concentration of defects induced by irradiation. We found that bombardment of graphene devices with 20-keV electrons can reduce the noise spectral density, S I /I 2 (I is the source-drain current) by an order-of magnitude at the radiation dose (RD) of 10 4 C/cm 2 . Our theoretical analysis suggests that the observed noise suppression after introduction of defects can be explained if the mechanism of 1/f noise in graphene is related to the electron-mobility fluctuations rather than to the carrier-density fluctuations. Apart from contributing to understanding the physics behind 1/f noise in graphene our results can possibly offer a practical method for noise reduction in various graphene devices. Graphene is relatively susceptible to the electron and ion bombardment owing to its single-atom thickness [21][22][23]. Electron irradiation can introduce different types of defects in graphene Noise Suppression in Graphene, UCR -RPI -Ioffe (2012) 5 depending on the beam energy and local environment, e.g. presence of organic contaminants. For this study we selected the electron energy of 20 keV in order to exclude the severe knock-on damage to ...

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“…Meisenheimer and Fleetwood [18] found that the magnitude of the noise in N-channel integrated MOSFETs correlates with the amount of radiation-induced positive oxide-trapped charge present during irradiation and anneal, but noise magnitude did not correlate with the interface-trapped charge. A correlation between pre-irradiation llfnoise and radiation hardness has also been reported [19], and it was found that the magnitude of the llf noise present in an MOS device is correlated with the radiation-induced hole-trapping efficiency of the oxide [20]. The physical reasons for that correlation have been attributed to the simple oxygen vacancy near the Si/SiO2 interface known to be present in the Si02 before irradiation.…”

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confidence: 74%

Effects of ionizing radiation on the noise properties of DMOS power transistors

Babcock

Titus

Schrimpf

et al. 1991

IEEE Trans. Nucl. Sci.

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AhtractThe llf noise properties of DMOS (double-diffused MOS) power transistors were examined as a function of total ionizing dose. The results indicate that radiation causes significant changes in the frequency dependence of the noise of the power MOSFETs studied. Before exposure to radiation, the noise power spectral density indicated a l/f;l relationship where A ranged from approximately 0.5 to 1.0. As the total dose level increased, A approached unity, while the magnitude of the noise increased proportionally with the radiation-induced charge density. In addition, noise measurements were performed after irradiation, while the devices were annealing under a ?12 V bias. It was found that, under the +12 V bias, 1 increased and under the -12 V bias, 1 decreased. Finally, no correlation was found between the pre-irradiation llf noise magnitude and the radiation hardness of these DMOS power transistors. L INTRODUCTIONLow frequency, or llf, noise is a well-known phenomenon associated with MOSFETs. It has been reported by various authors that a relationship exists between the density of traps near the Si/Si@ interface and the llfnoise measured in the device [ 1-51. Several detailed models for llf noise in MOSFETs have been presented and can be classified as number-fluctuation models [2, 61, mobilityfluctuation models [7, 81, or combinations of the two [5].

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Correlation between preirradiation 1/f noise and postirradiation oxide-trapped charge in MOS transistors

Cited by 63 publications

References 31 publications

Effects of aging on the 1∕f noise of metal-oxide-semiconductor field effect transistors

Effects of aging on the 1∕f noise of metal-oxide-semiconductor field effect transistors

Reduction of 1/f noise in graphene after electron-beam irradiation

Effects of ionizing radiation on the noise properties of DMOS power transistors

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