Effects of aging on the 1∕f noise of metal-oxide-semiconductor field effect transistors

Abstract

Articles you may be interested inFluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor applicationInfluence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface nchannel metal-oxide-semiconductor field-effect transistors J. Appl. Phys. 103, 044501 (2008); 10.1063/1.2844553 Effect of nitrogen incorporation on 1 / f noise performance of metal-oxide-semiconductor field effect transistors with HfSiON dielectric Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxidesemiconductor field-effect transistors with accumulated back gate J. Appl. Phys. 98, 114506 (2005); 10.1063/1.2138380Correlation between the 1 ∕ f noise parameters and the effective low-field mobility in Hf O 2 gate dielectric nchannel metal-oxide-semiconductor field-effect transistors

A skin-like two-dimensionally pixelized full-color quantum dot photodetector

“…where q is the elementary charge, C ox is the gate oxide capacitance, V D is the drain voltage, V G is the gate voltage, V th is the threshold voltage, k is the Boltzmann constant, T is the temperature, D t is the interface trap density, L is the length of the channel, W is the width of the channel, f is the frequency, and t 0 and t 1 are the minimum and maximum tunneling time, respectively. Here, we assume that t 1 /t 0 = 10 12 to be consistent with previous work (29,30), and from the results shown in Fig. 2 (A and B), D t is estimated as ~4.36 × 10 15 and ~7.5 × 10 12 eV −1 cm −2 for SCN − -and Sn 2 S 6 4−…”

“…According to the interface trapping model for the flicker noise (1/ f ) analysis, the S v can be expressed as ( 29 )Sv=false(q2/Cox2false)⋅false(VnormalD2/false(VG−Vthfalse)2false)⋅true(false(italickT Dtfalse)/false(LW lnfalse(τ1/τ0false)false)⋅false(1/ffalse)where q is the elementary charge, C ox is the gate oxide capacitance, V D is the drain voltage, V G is the gate voltage, V th is the threshold voltage, k is the Boltzmann constant, T is the temperature, D t is the interface trap density, L is the length of the channel, W is the width of the channel, f is the frequency, and τ 0 and τ 1 are the minimum and maximum tunneling time, respectively. Here, we assume that τ 1 /τ 0 = 10 12 to be consistent with previous work ( 29 , 30 ), and from the results shown in Fig. 2 (A and B), D t is estimated as ~4.36 × 10 15 and ~7.5 × 10 12 eV −1 cm −2 for SCN − - and Sn 2 S 6 4− -capped CdSe QD/a-IGZO phototransistors, respectively (at f = 10 Hz).…”

Total Ionizing Dose Effects on Strained ${\rm HfO}_{2}$-Based nMOSFETs

“…Uniaxial mechanical stress may change the trap energy levels by changing bond lengths and angles in and [26], [27]. This is consistent with previous works on the oxygen vacancy defect that show that the trap microstructure and energy levels can be changed by stretching the Si-Si bonds and/or changing the bond angles [28]- [31].…”

Vertically Stacked Full Color Quantum Dots Phototransistor Arrays for High‐Resolution and Enhanced Color‐Selective Imaging

“…Here, we measured the flicker 1/f noise which causes from resistance fluctuation and relates to a direct current as shown in Figure 3a. [67] In addition, photodetectivity (D*) of VSQD/aIGZO phototransistors was also measured as shown in Figure S16 in the Supporting Infor mation in order to estimate the performance of the devices, which is obtained from the following equation [18] ( ) /…”

“…Here, we measured the flicker 1/ f noise which causes from resistance fluctuation and relates to a direct current as shown in Figure a. [ 67 ] In addition, photodetectivity ( D* ) of VS‐QD/a‐IGZO phototransistors was also measured as shown in Figure S16 in the Supporting Information in order to estimate the performance of the devices, which is obtained from the following equation [ 18 ] where A is the channel area of the phototransistor, Δf is the spectral bandwidth, and NEP is the noise equivalent power, which was measured as NEP = (< I n 2 >) 1/2 / R , where < I n 2 > is the time‐averaged square of the dark noise current from the S I and the R is the responsivity measured under the same S I condition. The maximum D* of VS‐QD/a‐IGZO phototransistors reaches extremely high values of 2.1 × 10 17 , 6.3 × 10 17 , and 1.1 × 10 18 Jones upon R, G, and B illumination, respectively, at an optical modulated frequency of 10 Hz, which is considerably higher than the previous record for QD‐based hybrid phototransistors ( D* ∼ 10 15 Jones).…”