Direct full-color photodetectors without sophisticated color filters and interferometric optics have attracted considerable attention for widespread applications. However, difficulties of combining various multispectral semiconductors and improving photon transfer efficiency for high-performance optoelectronic devices have impeded the translation of these platforms into practical realization. Here, we report a low-temperature (<150°C) fabricated two-dimensionally pixelized full-color photodetector by using monolithic integration of various-sized colloidal quantum dots (QDs) and amorphous indium-gallium-zinc-oxide semiconductors. By introducing trap-reduced chelating chalcometallate ligands, highly efficient charge carrier transport and photoresistor-free fine-patterning of QD layers were successfully realized, exhibiting extremely high photodetectivity (>4.2 × 1017 Jones) and photoresponsivity (>8.3 × 103 A W−1) in a broad range of wavelengths (365 to 1310 nm). On the basis of these technologies, a wavelength discriminable phototransistor circuit array (>600 phototransistors) was implemented on a skin-like soft platform, which is expected to be a versatile and scalable approach for wide spectral image sensors and human-oriented biological devices.
Self-crosslinking polymerization between Sn2S64− clusters resulted transition metal free chalcogel with local coordination control and effective Cs+ remediation functionality.
Chalcogenide aerogels (chalcogels) are amorphous structures widely known for their lack of localized structural control. This study, however, demonstrates a precise multiscale structural control through a thiostannate motif ([Sn2S6]4−)-transformation-induced self-assembly, yielding Na-Mn-Sn-S, Na-Mg-Sn-S, and Na-Sn(II)-Sn(IV)-S aerogels. The aerogels exhibited [Sn2S6]4−:Mn2+ stoichiometric-variation-induced-control of average specific surface areas (95–226 m2 g−1), thiostannate coordination networks (octahedral to tetrahedral), phase crystallinity (crystalline to amorphous), and hierarchical porous structures (micropore-intensive to mixed-pore state). In addition, these chalcogels successfully adopted the structural motifs and ion-exchange principles of two-dimensional layered metal sulfides (K2xMnxSn3-xS6, KMS-1), featuring a layer-by-layer stacking structure and effective radionuclide (Cs+, Sr2+)-control functionality. The thiostannate cluster-based gelation principle can be extended to afford Na-Mg-Sn-S and Na-Sn(II)-Sn(IV)-S chalcogels with the same structural features as the Na-Mn-Sn-S chalcogels (NMSCs). The study of NMSCs and their chalcogel family proves that the self-assembly principle of two-dimensional chalcogenide clusters can be used to design unique chalcogels with unprecedented structural hierarchy.
Deep ultraviolet (DUV)-treatment is an efficient method for the removal of high-energy-barrier polymeric or aliphatic organic ligands from nanomaterials. Regardless of morphology and material, the treatment can be used for nanoparticles, nanowires, and even nanosheets. The high-energy photon irradiation from lowpressure mercury lamps or radio frequency (RF) discharge excimer lamps could enhance the electrical conductivity of various nanomaterial matrixes, such as Ag nanoparticles, Bi 2 Se 3 nanosheets, and Ag nanowires, with the aliphatic alkyl chained ligand (oleylamine; OAm) and polymeric ligand (polyvinyl pyrrolidone; PVP) as surfactants. In particular, Ag nanoparticles (AgNPs) that are DUV-treated with polyvinyl pyrrolidone (PVP) for 90 min (50-60 C) exhibited a sheet resistance of 0.54 U , À1 , while thermal-treated AgNP with PVP had a sheet resistance of 7.5 kU , À1 at 60 C. The simple photochemical treatment on various dimensionality nanomaterials will be an efficient sintering method for flexible devices and wearable devices with solution-processed nanomaterials.
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