2012
DOI: 10.1016/j.apsusc.2011.11.082
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Correlation between bioactivity and structural properties of titanium dioxide coatings grown by atomic layer deposition

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Cited by 34 publications
(30 citation statements)
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“…Using direct laser writing, we are able to reproducibly fabricate well‐defined, three‐dimensional structures consisting of polymer material (see experimental section for details). To exclude chemical influences of substrate biochemistry and to ensure biocompatibility we coat the structures with TiO 2 resulting in a surface chemistry found on most implants: Titanium with its native oxygen layer is a widely accepted implant material . To uniformly coat both the three‐dimensional structures and the substrate, we use atomic layer deposition (ALD).…”
Section: Introductionmentioning
confidence: 99%
“…Using direct laser writing, we are able to reproducibly fabricate well‐defined, three‐dimensional structures consisting of polymer material (see experimental section for details). To exclude chemical influences of substrate biochemistry and to ensure biocompatibility we coat the structures with TiO 2 resulting in a surface chemistry found on most implants: Titanium with its native oxygen layer is a widely accepted implant material . To uniformly coat both the three‐dimensional structures and the substrate, we use atomic layer deposition (ALD).…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, TiO 2 has good chemical affinity to both titanium substrate and apatite. Nevertheless, its surface hydroxyl groups such as Ti‐OH promote hydroxyapatite formation and bone bonding .…”
Section: Introductionmentioning
confidence: 99%
“…Hf x Al 1– x O y oxides with promising electrical properties were obtained by electron‐beam gun evaporation , chemical vapor deposition (CVD) . On the other hand, atomic‐layer deposition (ALD) consisting of periodically repeated self‐limiting reactions is well known as a unique deposition technique for growing uniform and reproducible thin films including multicomponent systems with precise control of components concentrations . These make ALD a suitable technique for deposition of Hf x Al 1– x O y oxides.…”
Section: Introductionmentioning
confidence: 99%