Correlating dopant distributions and electrical properties of boron-doped silicon nanowires

Schlitz, Ruth A.; Perea, Daniel E.; Lensch-Falk, Jessica L.; Hemesath, Eric R.; Lauhon, Lincoln J.

doi:10.1063/1.3250431

Cited by 47 publications

(46 citation statements)

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“…of the p-Si (n-Si) nanowire surface. 31 Ohmic contacts were simulated by implementing a Schottky model for the metal/semiconductor interfaces, and tunneling through the Schottky barrier was simulated using the Wentzel-Kramers-Brillouin approximation.…”

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confidence: 99%

Charge Separation at Mixed-Dimensional Single and Multilayer MoS₂/Silicon Nanowire Heterojunctions

Henning

Sangwan

Bergeron

et al. 2018

ACS Appl. Mater. Interfaces

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Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form nonplanar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the heterojunction geometry, providing a new degree of freedom to engineer device functions. Toward that end, we investigated the photoresponse of Si nanowire/MoS heterojunction diodes with scanning photocurrent microscopy and time-resolved photocurrent measurements. Comparison of n-Si/MoS isotype heterojunctions with p-Si/MoS heterojunction diodes under varying biases shows that the depletion region in the p-n heterojunction promotes exciton dissociation and carrier collection. We measure an instrument-limited response time of 1 μs, which is 10 times faster than the previously reported response times for planar Si/MoS devices, highlighting the advantages of the 1-D/2-D heterojunction. Finite element simulations of device models provide a detailed understanding of how the electrostatics affect charge transport in nanowire/vdW heterojunctions and inform the design of future vdW heterojunction photodetectors and transistors.

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Charge Separation at Mixed-Dimensional Single and Multilayer MoS₂/Silicon Nanowire Heterojunctions

Henning

Sangwan

Bergeron

et al. 2018

ACS Appl. Mater. Interfaces

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“…In Fig. 6(b), we could observe the entire core and partly shell of the nanowires, the outer facet of the nanowires observation exhibit this method have larger field of view compared with the conventional method [27] and is significant to study the properties of periphery of nanowires.…”

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Methodology exploration of specimen preparation for atom probe tomography from nanowires

Wong

et al. 2015

Ultramicroscopy

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“…[6][7][8][9] For example, Perea et al have performed the atom probe tomography to visualize the three-dimensional dopant distributions in Ge nanowires. Such controllability is also strongly required for vapor-liquid-solid ͑VLS͒ grown semiconductor nanowires toward functional nanowire device applications.…”

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Dopant homogeneity and transport properties of impurity-doped oxide nanowires

Klamchuen

Yanagida

Kanai

et al. 2011

Applied Physics Letters

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Articles you may be interested inEnhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO2)/TiO2 heterojunction semiconductors with varied Sb doping concentration J. Appl. Phys. 116, 094902 (2014); 10.1063/1.4894615 Investigation of electrical properties of Mn doped tin oxide nanoparticles using impedance spectroscopyControlling and understanding an impurity doping on semiconductor oxide nanowires grown by the vapor-liquid-solid ͑VLS͒ method remains an important challenge. Homogeneous dopant distribution within oxide nanowires has been assumed without the direct evaluations to interpret the transport properties. Here we report the direct measurements of dopant distributions for Ta-doped SnO 2 nanowires. We find that differences in dopant incorporations between VLS and vapor-solid growth processes give rise to a heavily doped shell surrounding an underdoped core. Thus, understanding the dopant incorporation pathways is essential to designing and controlling impurity doping on VLS grown oxide nanowires.

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Correlating dopant distributions and electrical properties of boron-doped silicon nanowires

Abstract: Palladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection Appl. Phys. Lett.Electrical properties of high density arrays of silicon nanowire field effect transistors

Cited by 47 publications

References 20 publications

Charge Separation at Mixed-Dimensional Single and Multilayer MoS₂/Silicon Nanowire Heterojunctions

Charge Separation at Mixed-Dimensional Single and Multilayer MoS₂/Silicon Nanowire Heterojunctions

Methodology exploration of specimen preparation for atom probe tomography from nanowires

Dopant homogeneity and transport properties of impurity-doped oxide nanowires

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Correlating dopant distributions and electrical properties of boron-doped silicon nanowires

Abstract: Palladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection Appl. Phys. Lett.Electrical properties of high density arrays of silicon nanowire field effect transistors

Cited by 47 publications

References 20 publications

Charge Separation at Mixed-Dimensional Single and Multilayer MoS2/Silicon Nanowire Heterojunctions

Charge Separation at Mixed-Dimensional Single and Multilayer MoS2/Silicon Nanowire Heterojunctions

Methodology exploration of specimen preparation for atom probe tomography from nanowires

Dopant homogeneity and transport properties of impurity-doped oxide nanowires

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Charge Separation at Mixed-Dimensional Single and Multilayer MoS₂/Silicon Nanowire Heterojunctions

Charge Separation at Mixed-Dimensional Single and Multilayer MoS₂/Silicon Nanowire Heterojunctions