Methodology exploration of specimen preparation for atom probe tomography from nanowires

Qu, Jiangtao; Wong, Derek Chi Kian; Du, Sichao; Yang, Limei; Ringer, Simon P.; Zheng, Rongkun

doi:10.1016/j.ultramic.2015.06.003

Cited by 6 publications

(9 citation statements)

References 27 publications

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“…However, as APT relies on (field-)evaporating atoms from a single tip-shaped object to carry out the tomographic analysis, 24 it is necessary to isolate a single nanowire to allow for a success-and meaningful APT analysis of a nanowire. 12−17 Different approaches have been developed to isolate single nanowires for APT including focused ion-beam (FIB)-based procedures, 10,11 growing nanowires in isolation, 7,8,13 and picking up of single nanowires using electron beam-induced metal deposition. 12−17 Unfortunately, FIB-based procedures can alter the nanowires makeup.…”

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confidence: 99%

“…Secondary ion mass spectroscopy (SIMS), as the standard method for monitoring doping profiles in the semiconductor industry, is unfortunately not applicable to nanowires. Therefore, atom probe tomography (APT) has been proposed as an alternative. − …”

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confidence: 99%

“…APT of nanowires has so far been hampered by the relatively complex preparation of suitable samples. ,,, Here, we develop a technique to isolate single nanowires from a forest of as-grown nanowires to carry out APT. It enables us to map the presence of matrix atoms and impurities with subnanometer spatial resolution and unprecedented sensitivity down to the ppm level or a doping level slightly below 10 17 atoms/cm 3 , respectively.…”

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confidence: 99%

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Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity

Koelling

Cavalli

et al. 2017

Nano Lett.

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The functionality of semiconductor devices is determined by the incorporation of dopants at concentrations down to the parts per million (ppm) level and below. Optimization of intentional and unintentional impurity doping relies on methods to detect and map the level of impurities. Detecting such low concentrations of impurities in nanostructures is however challenging to date as on the one hand methods used for macroscopic samples cannot be applied due to the inherent small volumes or faceted surfaces and on the other hand conventional microscopic analysis techniques are not sufficiently sensitive. Here, we show that we can detect and map impurities at the ppm level in semiconductor nanowires using atom probe tomography. We develop a method applicable to a wide variety of nanowires relevant for electronic and optical devices. We expect that it will contribute significantly to the further optimization of the synthesis of nanowires, nanostructures and devices based on these structures.

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confidence: 99%

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confidence: 99%

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Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity

Koelling

Cavalli

et al. 2017

Nano Lett.

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“…Various attempts have been made to develop methods for TEM and APT specimen preparation during the last three decades. For instance, techniques such as electropolishing, ion milling, nanowire growth, chemical etching, mechanical shaping, and so forth (see details in ref and ) have been developed for APT specimen preparation. However, in situ FIB preparation of APT specimens remains a challenge for nanomaterials (such as NPs), where nanoscale precision is needed.…”

Section: Resultsmentioning

confidence: 99%

Ion-Induced Bending with Applications for High-Resolution Electron Imaging of Nanometer-Sized Samples

Zhang

Garg

Gervinskas

et al. 2021

ACS Appl. Nano Mater.

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In this work, a "stand-out" approach is proposed for the preparation of nanoscale specimens for high-resolution imaging such as transmission electron microscopy (TEM) and atom probe tomography (APT). By controlling the FIB (focused ion beam) irradiation parameters, including the ion dose, beam direction, and beam energy, the proposed approach is capable of lifting nano-or microscale specimens in situ to a desired height, driven by internal stresses. The "stand-out" specimens can be further shaped by FIB milling into needle-shaped or micropad geometries for various nanocharacterization techniques. A detailed investigation of the underlying ion-induced bending (IIB) mechanisms has been performed through both experiments and theoretical analysis of the control of molybdenum cantilevers at both ambient and cryogenic temperatures. Additional materials including copper, silicon, and steel have also been trialed, and all the results suggest IIB to be a universal phenomenon. Application of IIB has been demonstrated for site-specific TEM imaging of gold nanoparticles. Furthermore, the proposed approach also provides unique site-specific sample preparation for APT. It is expected that this approach will streamline nanoscale specimen preparation for high-resolution imaging and facilitate the development of fully automated solutions.

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“…Lift-out-type strategies for NW preparation have been reported as well. For NWs with suitable dimensions, individual NWs can be extracted by cutting or plucking the NWs from the host substrate and attaching them to carrier tips (Agrawal et al, 2011; Eichfeld et al, 2012; Isheim et al, 2012; Sanford et al, 2014; Qu et al, 2015). Although care must be taken to prevent damaging exposure, to any ROI, by the ion beam during the NW cutting operation and subsequent aligning to a carrier tip, many successful analyses have been reported.…”

Section: Other Preparation Challengesmentioning

confidence: 99%

Modern Focused-Ion-Beam-Based Site-Specific Specimen Preparation for Atom Probe Tomography

Prosa

Larson

2017

Microsc Microanal

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Approximately 30 years after the first use of focused ion beam (FIB) instruments to prepare atom probe tomography specimens, this technique has grown to be used by hundreds of researchers around the world. This past decade has seen tremendous advances in atom probe applications, enabled by the continued development of FIB-based specimen preparation methodologies. In this work, we provide a short review of the origin of the FIB method and the standard methods used today for lift-out and sharpening, using the annular milling method as applied to atom probe tomography specimens. Key steps for enabling correlative analysis with transmission electron-beam backscatter diffraction, transmission electron microscopy, and atom probe tomography are presented, and strategies for preparing specimens for modern microelectronic device structures are reviewed and discussed in detail. Examples are used for discussion of the steps for each of these methods. We conclude with examples of the challenges presented by complex topologies such as nanowires, nanoparticles, and organic materials.

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Methodology exploration of specimen preparation for atom probe tomography from nanowires

Cited by 6 publications

References 27 publications

Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity

Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity

Ion-Induced Bending with Applications for High-Resolution Electron Imaging of Nanometer-Sized Samples

Modern Focused-Ion-Beam-Based Site-Specific Specimen Preparation for Atom Probe Tomography

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