Dopant homogeneity and transport properties of impurity-doped oxide nanowires

Abstract

Articles you may be interested inEnhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO2)/TiO2 heterojunction semiconductors with varied Sb doping concentration J. Appl. Phys. 116, 094902 (2014); 10.1063/1.4894615 Investigation of electrical properties of Mn doped tin oxide nanoparticles using impedance spectroscopyControlling and understanding an impurity doping on semiconductor oxide nanowires grown by the vapor-liquid-solid ͑VLS͒ method remains an important challenge. Homogeneous dopant distribution within oxide nanowires has been assumed without the direct evaluations to interpret the transport properties. Here we report the direct measurements of dopant distributions for Ta-doped SnO 2 nanowires. We find that differences in dopant incorporations between VLS and vapor-solid growth processes give rise to a heavily doped shell surrounding an underdoped core. Thus, understanding the dopant incorporation pathways is essential to designing and controlling impurity doping on VLS grown oxide nanowires.

Advanced Photoassisted Atomic Switches Produced Using ITO Nanowire Electrodes and Molten Photoconductive Organic Semiconductors

“…A pellet consisting of a mixture of In and Sn powders (Kojundo Chemical Laboratory Co., Ltd.) was used as the target, and the ratio of the concentration (at%) of Sn to In was constantly maintained at 10:90. Details about the growth and characterization of the ITO nanowires can be found elsewhere in the literature . The length, L , of the nanowires was varied from 700 to 1100 nm, and the diameter of the nanowires was 20 nm.…”

“…Note that the resistivity of the ITO thin film is about 1.94 × 10 −4 Ω·cm. In addition, since the diameter and length of ITO nanowires grown using VLS deposition can be controlled by controlling the size of the Au catalyst and the growth time, it is promising that the size of the electrodes and the distance between them can be controlled using VLS deposition to grow the nanowires rather than using time‐consuming and expensive electron beam lithography (EBL), which is inappropriate not only for studying PAS but also for practical device application.…”

Sequential Phase Transition during Fabricating β-Ag₂S Film on Ag Electrode by Wet Chemical Process

“…Because of the recent rapid development of atomic switches utilizing solid ion conductors [1][2][3][4][5], the application of nonvolatile devices in complementary metal oxide semiconductor (CMOS) devices is becoming possible. A gap-type atomic switch, which is one of the most desirable nonvolatile nanodevices, is a new style of switching device that has a structure consisting of β-Ag 2 S and Pt counter electrodes with a 1-nm gap.…”

“…To avoid problems, we attempted to make the gap wider in a previous study. We succeeded in operating an atomic switch only when light was irradiated by placing photoconductive organic molecules in the gap between the counter electrodes [4,5]. To commercialize this wider-gap atomic switch, it is necessary to stably mass produce flatter Ag 2 S electrodes.…”

Switching Properties of Titanium Dioxide Nanowire Memristor

“…We have demonstrated the fabrication of transition-metal oxide nanowires and the single nanowire device. We combined two techniques: conventional vapor-liquid-solid (VLS) onedimensional (1D) nanowire growth via metal catalysts [45][46][47][48][49][50][51][52][53][54][55][56][57][58][59] and a heterostructured formation technique. [60][61][62][63][64][65][66] By adopting this combined technique, we can design transition-metal oxide nanowires and a single nanowire device.…”