2005
DOI: 10.1088/0022-3727/38/4/013
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Conversion efficiency of a laser-produced Sn plasma at 13.5 nm, simulated with a one-dimensional hydrodynamic model and treated as a multi-component blackbody

Abstract: Efficiency optimization of a stable and debris free plasma source at 13.5 nm, is at the forefront of current extreme ultraviolet lithographic (EUVL) research efforts. To date, 1–2.5% soft x-ray conversion efficiencies (CEs) within a 2% bandwidth (BW) around 13.5 nm and into 2π steradians have been attained experimentally for laser-produced plasmas containing Sn at power densities of 0.5–5 × 1011 W cm−2. In order to complement these experimental endeavours, we have undertaken to study the CE, for the given wave… Show more

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Cited by 36 publications
(21 citation statements)
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“…For the plasma viewed at the orientations of Fig. 2(c) and 2(d), because of opacity effects, the bulk of the observed emission is known to originate in a layer close to the plasma boundary and the ion distribution there largely controls the emission profile [17]. For an expanding plasma, the highest stages are generally found close to the centre of the plume while lower stages dominate close to the edge.…”
mentioning
confidence: 95%
“…For the plasma viewed at the orientations of Fig. 2(c) and 2(d), because of opacity effects, the bulk of the observed emission is known to originate in a layer close to the plasma boundary and the ion distribution there largely controls the emission profile [17]. For an expanding plasma, the highest stages are generally found close to the centre of the plume while lower stages dominate close to the edge.…”
mentioning
confidence: 95%
“…For laserproduced tin plasmas, (1 ÷ 2.5) % soft X-ray CEs at power densities of (0.5 ÷ 5) × 10 11 W cm −2 within a 2 % bandwidth around 13.5 nm and into 2π sr have been obtained experimentally [7]. In this paper, the simulation of the Ni-like and Co-like X-ray resonance lines together with free-free and free-bound emission between 1Å and 30Å emitted from tin plasmas produced by a Nd:YAG laser is described.…”
Section: Introductionmentioning
confidence: 89%
“…To use X-rays for extreme ultraviolet (EUV) lithography [2], X-ray microscopy [3], and analytic techniques [4,5] have drawn much attention because of the need for the new lithography and microscopy techniques [6]. Extreme ultraviolet lithography (EUVL) will require bright, efficient plasma sources for use at soft X-ray wavelengths of 13.5 nm [7]. A suitable scheme for lithography requires at least 3 % conversion efficiency (CE) of incident laser energy to soft X-rays in a 2 % bandwidth centred at the 13.5 nm peak [8].…”
Section: Introductionmentioning
confidence: 99%
“…The debris-free double-stream Xe/He gas-puff target reaches 0.43% CE (R. Rakowski, et al, to be published). The literature reports the possibility of increasing the conversion efficiency up to 6% for tin target [22,23]. Presumably, tin-based plasma might be utilized for 13.5-nm lithography, because it exceeds the demanded 3% CE [11,24].…”
mentioning
confidence: 99%