Conventional EBIC versus MOS/EBIC study of electrically active defects in Si and SOI

Bondarenko, I. E.; Kirk, H. R.; Kononchuk, Oleg; Rozgonyi, G. A.

doi:10.1016/s0921-5107(96)01679-0

Cited by 4 publications

(4 citation statements)

References 6 publications

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“…the oxide was formed by implanting with high doses of oxygen, (the SIMOX process). 4 In all these cases, the shallow defects are only visible when x d (MOS) is reduced by biasing at some intermediate value between strong inversion (x d ϭ x dmax ) and accumulation (x d r 0). This type of behavior has been defined as transition bias contrast and is discussed further in the next section.…”

Section: Resultsmentioning

confidence: 97%

“…In addition, i ox contrast varies greatly as a function of the electric field strength in the oxide and the detailed nature of the specific defect. In the literature, individual oxide defects have been reported to produce i ox contrast under a number of disparate conditions, including (i) at all biases prior to breakdown, 4,[11][12][13] (ii) only at high biases (> 4 MV/cm) prior to breakdown, 30,31 and (iii) only after oxide breakdown. 5,6,13,14 One reason for this complex contrasting behavior is that the electron beam enhancement of i ox occurs by at least two distinct mechanisms.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, it appears that bright to dark contrast inversions are very likely due to local increases in the SiO 2 defect density (probably hole traps), rather than simple oxide thickness perturbations. In any case, it is evident from the literature that oxide defects may cause i ox contrast, [1][2][3][4][5][6][7][8][9][10][11][12][13] depending on the physical thickness, and dielectric quality of the oxide energy barrier.…”

Section: Resultsmentioning

confidence: 99%

“…In recent years, the scanning microscopy of metal oxide silicon capacitors by the electron-beam induced current technique (MOS/ EBIC) has yielded a number of important results for the electrical characterization of the Si/SiO 2 materials system. [1][2][3][4][5][6][7][8][9][10][11][12][13] These results are especially exciting since the development of the focused ion beam instrument (FIB) makes it possible to prepare samples for transmission electron microscopy (TEM) at specific sites corresponding to any of a wide range of electrically active defects which can be detected by MOS/EBIC. The structural and morphological information is crucial since the defects negatively impact the Si/SiO 2 materials system and the performance parameters of MOS based devices.…”

mentioning

confidence: 99%

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Bias Dependent Contrast Mechanisms in EBIC Images of MOS Capacitors

Kirk

Radzimski²,

Romanowski

et al. 1999

J. Electrochem. Soc.

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Defects and inhomogeneities in the electrical properties of metal oxide silicon capacitors are analyzed by scanning electron microscopy, using the electron beam induced current technique (MOS/EBIC). All capacitors were analyzed in their as‐fabricated or prebreakdown condition. The collected signals and image contrast are found to be highly dependent on the gate‐to‐substrate bias applied during MOS/EBIC examination, and this bias‐dependence is shown to be correlated with the nature and physical location of the defect. Specific MOS defects were selected for this study according to their position in the substrate, in the oxide, or at the normalSi/SiO2 interface. Substrate defects examined were misfit dislocations in epitaxial Si(Ge) on Si. Interfacial inhomogeneities included thermally oxidized, reactive ion etched (RIE) Si surfaces, and SiO2 precipitates or “D‐defects” which extend to meet the Si surface. Oxide layer inhomogeneities were also detectable which exhibited a strong contrast dependence on the oxide electric field strength. © 1999 The Electrochemical Society. All rights reserved.

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Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Bias Dependent Contrast Mechanisms in EBIC Images of MOS Capacitors

Kirk

Radzimski²,

Romanowski

et al. 1999

J. Electrochem. Soc.

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Gettering of iron in silicon-on-insulator wafers

Beaman

Agarwal

Kononchuk

et al. 1997

Applied Physics Letters

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Gettering of Fe in silicon-on-insulator material has been investigated on both the bonded and separation by implantation of oxygen (SIMOX) platforms. Reduction of electrically active iron in intentionally contaminated and annealed wafers has been measured by deep level transient spectroscopy. These data, coupled with structural characterization techniques, such as transmission electron microscopy and preferential chemical etching, provide evidence that structural postimplantation damage below the buried oxide (BOX) in SIMOX wafers is an effective site for gettering of iron with the iron gettering efficiency varying with the SIMOX processing. Gettering was not observed in bonded wafers, and the lower BOX interface did not provide any iron gettering in either bonded or SIMOX wafers.

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Understanding and optimizing EBIC pn-junction characterization from modeling insights

Zhou

Tweddle

et al. 2020

Journal of Applied Physics

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In this paper, the physical mechanisms involved in electron-beam-induced current (EBIC) imaging of semiconductor pn-junctions are reviewed to propose a model and optimize the acquisition of experimental data. Insights are drawn on the dependence of the EBIC signal with electron accelerating voltage and surface conditions. It is concluded that improvements in the resolution of EBIC are possible when the surface conditions of the specimens are carefully considered and optimized. A lower accelerating voltage and an increase of the surface recombination velocities are quantitatively shown to maximize the EBIC lateral resolution in locating the pn-junction. The effect of surface band bending is included in the model, and it is seen to primarily affect the surface recombination. Introducing controlled surface damage is shown as a potential method for resolution enhancement via focused ion beam milling with Ga+ ions. These findings contribute to the understanding of this technique and can produce further improvements to its application in semiconductor device technology.

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Conventional EBIC versus MOS/EBIC study of electrically active defects in Si and SOI

Cited by 4 publications

References 6 publications

Bias Dependent Contrast Mechanisms in EBIC Images of MOS Capacitors

Bias Dependent Contrast Mechanisms in EBIC Images of MOS Capacitors

Gettering of iron in silicon-on-insulator wafers

Understanding and optimizing EBIC pn-junction characterization from modeling insights

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