Controlled passivation of GaAs by Se treatment

Abstract

The passivation of GaAs(100) by Se has been achieved in a controlled manner. Results provided by synchrotron radiation photoelectron spectroscopy show that the extent of Se bonding to As and degree of band bending can be systematically controlled by varying the GaAs substrate temperature during Se exposure. Furthermore, the formation of Ga vacancies is also found to depend on substrate temperature.

Photoemission study of the solid-state interdiffusion in hybrid Fe/ZnSe/GaAs(001) heterostructures

“…29 For Se passivation of GaAs, two distinct bonding configurations are observed around bulk Se 3d with a narrowing of the Se 3d emission line at temperatures higher than 350°C associated with chemical conversion from As-Se to Ga-Se, whereas for Zn FIG. 4.…”

“…28 Se-GaAs formation at the GaAs surface characterizes several reconstructions with Se remaining bound at the surface up to temperatures close to 550°C where GaAs desorption occurs. 29 For temperatures raising from 250 to 450°C, the formation of Ga 2 Se 3 -like stoichiometry layers has been reported; except in the case where Zn-controlled passivation of the GaAs surface is made when ZnAs x compounds are formed. 30 Curiously enough, no equivalent photoemission study of the thermal stability of very thin ZnSe epilayers on GaAs has been published.…”

Near-surface electronic structure in GaAs (100) modified with self-assembled monolayers of octadecylthiol

“…Initial work involving chemical treatments focused on GaAs surfaces passivated with inorganic sulfides, such as Na 2 S and (NH 4 ͒ 2 S. [1][2][3][4][5][6] More recently, passivation has been successfully achieved with the use of selenium sulfide 7 and other group VI sources. [8][9][10] The success of these inorganic sulfides has led some workers to investigate organic thiols, 11 most notably octadecylthiol ͑ODT͒, which forms a selfassembled monolayer on the surface of GaAs. 12 Organic thiols are of interest, since long alkyl chains may provide some diffusion barrier, thus enhancing the passivation properties.…”

Effect of SeS2 treatment on the surface modification of GaAs and adhesive wafer bonding of GaAs with Silicon

“…The passivation was done for different timings of 5, 10 and 15 s at room temperature. All the passivated samples were directly annealed at 350 C in nitrogen for 10 min so as to enable them for adhesive wafer bonding with silicon by overcoming problems of surface band bending by Asto-Ga atomic concentration ratio, As-S and As-Se based weaker bonds [9,10]. The crystalline phase modifications of SeS 2 treated GaAs (1 0 0) were directly measured by powder XRD analysis from 30 to 100 at a rate of 1 /min using Rich Seifert diffractometer (Model No.…”