Effect of SeS2 treatment on the surface modification of GaAs and adhesive wafer bonding of GaAs with Silicon

Wang

Crystal Growth & Design

et al. 2018

Because of the inevitable Fermi level pinning on surface/interface states of nanowires, achieving high-performance nanowire devices with controllable nanoscale contacts is always challenging but important. Herein, single-crystalline heterostructured Ga/GaAs nanowires with sharp hetero-Schottky interfaces have been successfully synthesized on amorphous substrates by utilizing Au nanoparticles as catalytic seeds via chemical vapor deposition. These nanowires are found to grow with the hemispherical Au7Ga2 catalytic tips following the vapor–liquid–solid mechanism. During the growth, simply by manipulating the source and growth temperatures, the Ga precipitation rate from Au–Ga alloy tips as well as the reaction rate of Ga precipitates with As can be reliably controlled in order to tailor the length (0–170 nm) of Ga nanowire segments obtained in the heterostructure. When configured into field-effect transistors, these Ga/GaAs NWs exhibit the p-type conductivity with a sharp hetero-Schottky barrier of ∼1.0 eV at the atomically connected Ga segment/GaAs NW body interface, in which this barrier height is close to the theoretical difference between the GaAs Fermi level (5.1–5.3 eV) and the Ga work function (∼4.3 eV), suggesting the effective formation of nanoscale contact by minimizing the Fermi level pinning, being advantageous for advanced nanoelectronics.

Section: Resultsmentioning

confidence: 99%

“…To further explore the crystallinity of obtained NWs, XRD is performed as shown in Figure d. Two dominant diffraction peaks are found at 2θ angles of 27.30° and 45.41° without considering the substrate peaks, where these two peaks are corresponded to the cubic zincblende (ZB) GaAs (111) and (220) planes …”

Section: Resultsmentioning

confidence: 99%

Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier

Wang

Crystal Growth & Design

et al. 2018

Физика И Техника Полупроводников

“…[168] и с тех пор продолжает широко применяться для модификации характеристик различных оптоэлектронных и электронных приборов, в том числе светодиодов и лазеров [169,170], фотоприемников [21,[171][172][173][174], биполярных и полевых транзисторов [168,[175][176][177], а также наноструктур [178][179][180]. Данная обработка может использоваться и для модификации электронных свойств интерфейсов полупроводник/диэлектрик [20,28,181,182], a также для последующей модификации интерфейсов полупроводника с органической молекулой [151] [190][191][192][193], а также раствор S 2 Cl 2 в CCl 4 (наряду с чистым S 2 Cl 2 ) [194][195][196]. Было также показано, что обработка поверхности n-GaAs(100) раствором S 2 Cl 2 в CCl 4 приводила к заметному снижению плотности ПС и уменьшению приповерхностного изгиба зон, а также к формированию дипольного слоя, обусловленного связями Ga−S [197].…”

Section: методы модификации поверхностиunclassified

Модификация Атомной И Электронной Структуры Поверхности Полупроводников А-=sup=-Iii-=/Sup=-В-=sup=-v-=/Sup=- На Границе С Растворами Электролитов О Б З Ор

Лебедев¹

2020

Recent experimental and theoretical results on modification of the surface atomic and electronic structure of various III–V semiconductor with electrolyte solutions are reviewed. The relationship between the chemical and charge transfer processes that proceed at the semiconductor/electrolyte interfaces and accompanying modification of the semiconductor surface atomic and electronic structure is revealed. Advances in the application of electrolyte solutions for modification of the semiconductor nanostructures and device performance are discussed.

Journal of Applied Physics

Adhesive wafer bonding

Niklaus

Stemme

Lü

et al. 2006

420

307