Adhesive wafer bonding

Niklaus, Frank; Stemme, G.; Lü, Jian–Qiang; Gutmann, R.J.

doi:10.1063/1.2168512

Cited by 418 publications

(311 citation statements)

References 108 publications

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“…The flat surface of the released GaN layer (RMS roughness ofB5 Å measured from AFM image in Supplementary Fig. 5) allowed us to bond the released GaN film directly onto (100) Si substrates with a 90-nm SiO 2 layer 28 . As shown in the XSEM image in Fig.…”

Section: Resultsmentioning

confidence: 99%

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Kim¹,

Bayram²,

Park³

et al. 2014

Nat Commun

344

299

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There are numerous studies on the growth of planar films on sp 2 -bonded two-dimensional (2D) layered materials. However, it has been challenging to grow single-crystalline films on 2D materials due to the extremely low surface energy. Recently, buffer-assisted growth of crystalline films on 2D layered materials has been introduced, but the crystalline quality is not comparable with the films grown on sp 3 -bonded three-dimensional materials. Here we demonstrate direct van der Waals epitaxy of high-quality single-crystalline GaN films on epitaxial graphene with low defectivity and surface roughness comparable with that grown on conventional SiC or sapphire substrates. The GaN film is released and transferred onto arbitrary substrates. The post-released graphene/SiC substrate is reused for multiple growth and transfer cycles of GaN films. We demonstrate fully functional blue light-emitting diodes (LEDs) by growing LED stacks on reused graphene/SiC substrates followed by transfer onto plastic tapes.

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Section: Resultsmentioning

confidence: 99%

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Kim¹,

Bayram²,

Park³

et al. 2014

Nat Commun

344

299

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“…A review of the use of adhesive bonding in MEMS is presented in Ref. 101. The polymers used in adhesive bonding for microfluidic applications are usually thermoplastic materials (which can be repeatedly softened by heating and solidified by cooling) or thermosetting materials (which form a 3D network by cross-linking and cannot be remelted).…”

Section: Adhesive Bondingmentioning

confidence: 99%

A practical guide for the fabrication of microfluidic devices using glass and silicon

Iliescu¹,

Taylor²,

Avram³

et al. 2012

Biomicrofluidics

298

207

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This paper describes the main protocols that are used for fabricating microfluidic devices from glass and silicon. Methods for micropatterning glass and silicon are surveyed, and their limitations are discussed. Bonding methods that can be used for joining these materials are summarized and key process parameters are indicated. The paper also outlines techniques for forming electrical connections between microfluidic devices and external circuits. A framework is proposed for the synthesis of a complete glass/silicon device fabrication flow. I. WHY USE SILICON AND GLASS IN MICRO-AND NANO-FLUIDIC APPLICATIONS?Micro-and nano-fluidic technology continues to be embraced by biologists, 1-3 chemists, 4 and engineers throughout academia and industry. As its applications have expanded, there has been an explosion in the range of materials and processes used to fabricate these devices. The earliest microfluidic devices (e.g., gas 5 and liquid 6 chromatography devices) were made from silicon and glass and borrowed processes directly from semiconductor and microelectromechanical systems (MEMS) manufacturing. 7 Now, however, many researchers have moved away from silicon and glass, and instead use cast elastomers such as polydimethylsiloxane (PDMS)-which is ideal for swift prototyping-or thermoplastic polymers, which can be hot-embossed or injection-molded and are well suited to inexpensive manufacturing. Yet, there remain many applications where glass and silicon offer advantages over polymeric materials. In this paper, we highlight these advantages and offer a framework for selecting fabrication processes when using silicon and glass. A. The dominance of soft lithographyOver the last decade, PDMS has become virtually the default material for forming microfluidic devices, 8 because of the sheer ease with which it can be cast on to a micro-scale mould and then strongly bonded to glass. 9 The elastomeric nature of the material has been exploited to integrate fluidic valves and pumps on-chip and has simplified the production of multi-layer devices because the soft layers readily conform to each other. 10,11 Yet, the low stiffness (usually <1 MPa) of PDMS relative to amorphous thermoplastics, silicon, and glass has its own a) Authors to whom correspondence should be addressed. Electronic addresses: ciliescu@ibn.a-star.edu.sg and hkt@ntu.edu.sg. 6, 016505 (2012) drawbacks. High aspect-ratio channels are notoriously difficult to fabricate in PDMS because of their propensity to collapse. 12 Moreover, difficulties in automating the handling of such a soft material have hampered efforts to scale up PDMS device manufacturing. Meanwhile, PDMS's high oxygen and water permeabilities have proved both a blessing and a curse in different applications.The hydrophobic nature of PDMS can be an important consideration for some biological applications. In drug screening applications, for example, hydrophobic drugs as well as metabolites (urea or albumin) can be absorbed into the device's material due to hydrophobic--hydrophobic interaction...

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“…[1][2][3][4] Furthermore, and maybe the most attractive, 5 this technology enables the possibility of heterogeneous integration of disparate functional blocks, such as micro-electro-mechanical system (MEMS) sensors and complementary metal-oxide-semiconductor (CMOS) circuit integration in a vertical and seamless way, 6 as well as in InP-Si heterogeneous direct bonding to enhance the performance of Si photonic integrated devices. 7 A great number of materials have been applied to achieve wafer-level bonding for 3D integration circuit (IC) applications; the most popular include polymer adhesive materials, 8,9 intermetallic compounds, 10,11 diffusion metal materials (such as gold, 12 aluminum, 13 and copper,) 14 and silicon oxide. 15 Amongst these different materials, copper and oxide are most attractive as they are widely used as the interconnectors and interlayer dielectrics based on CMOS backend processing.…”

Section: Introductionmentioning

confidence: 99%

High-κ Al2O3 material in low temperature wafer-level bonding for 3D integration application

Fan

Tan

2014

AIP Advances

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This work systematically investigated a high-κ Al2O3 material for low temperature wafer-level bonding for potential applications in 3D microsystems. A clean Si wafer with an Al2O3 layer thickness of 50 nm was applied as our experimental approach. Bonding was initiated in a clean room ambient after surface activation, followed by annealing under inert ambient conditions at 300 °C for 3 h. The investigation consisted of three parts: a mechanical support study using the four-point bending method, hermeticity measurements using the helium bomb test, and thermal conductivity analysis for potential heterogeneous bonding. Compared with samples bonded using a conventional oxide bonding material (SiO2), a higher interfacial adhesion energy (∼11.93 J/m2) and a lower helium leak rate (∼6.84 × 10−10 atm.cm3/sec) were detected for samples bonded using Al2O3. More importantly, due to the excellent thermal conductivity performance of Al2O3, this technology can be used in heterogeneous direct bonding, which has potential applications for enhancing the performance of Si photonic integrated devices.

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Adhesive wafer bonding

Abstract: Articles you may be interested inDesign and optimization of wafer bonding packaged microelectromechanical systems thermoelectric power generators with heat dissipation path

Cited by 418 publications

References 108 publications

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

A practical guide for the fabrication of microfluidic devices using glass and silicon

High-κ Al2O3 material in low temperature wafer-level bonding for 3D integration application

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