High-<i>κ</i> Al2O3 material in low temperature wafer-level bonding for 3D integration application

Fan, Jiawei; Tu, Lai; Tan, Chuan Seng

doi:10.1063/1.4867089

Cited by 4 publications

(2 citation statements)

References 26 publications

(23 reference statements)

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“…The ALD AlO surface is treated with water, vapor, or oxygen plasma to achieve hydrophilic surfaces, followed by the post-bonding annealing at 200-330°C for bonding of Si, SiO 2 , and III-V photosemiconductors. [30][31][32][33] Even though the hydrophilic bonding via ALD AlO intermediate layer achieves the transparent bonding interface, the heating process is still required for the postbonding annealing and ALD process.…”

Section: Introductionmentioning

confidence: 99%

Room Temperature Wafer Bonding of Glass Using Aluminum Oxide Intermediate Layer

Takeuchi

Matsumoto³

et al. 2021

Adv Materials Inter

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applications, the glass bonding should not deteriorate the transparency at the interface for efficient light transmission. Moreover, voids at the bonding interface are obstacles as they lead to a topical decrease in transparency. For these reasons, the indirect bonding of glass using adhesive including epoxy and UV-curing resins is not appropriate since the adhesive layer deteriorates the optical characteristics and the sealing performance especially against water permeation. Hence, a direct glass bonding is highly required for the fabrication of reliable applications. The direct bonding of glass has been studied for a long time. One popular method is hydrophilic bonding, in which the glass surfaces are treated to achieve OH groups, followed by the post-bonding annealing at over 600 °C to achieve covalent bonds between the glass surfaces. In this method, the OH groups and water on the bonding surfaces are decomposed and the generated H 2 diffuses into the amorphous structure of glass (2Si-OH  →  Si-O-Si + H 2 O, Si + 2H 2 O  →  SiO 2 + 2H 2). [10-12] However, the high temperature annealing process will lead to damage at the bonding interface, which is induced by residual stress due to the mismatch of the coefficient of thermal expansion. The high temperature process also leads to damage to heat-sensitive components including electrodes, enzymes, and light sources. Furthermore, the decomposed H 2 O and OH groups can be trapped at the bonding interface, resulting in interfacial voids. [10,13] Therefore, glass bonding at room temperature is a desirable process. In order to lower the post-bonding annealing temperature, hydrophilic bonding has been modified mainly by using surface activation such as plasma and UV in the previous studies. The surface activation using O 2 and/or N 2 plasmas has been widely investigated to increase the OH groups on the glass surface. [14-16] For the surface activation by UV irradiation, the organic contamination on the surface is removed using O 3 induced by UV. In the meantime, the hydrophilicity of the glass surface is improved. [17,18] However, since the hydrophilic bonding mechanism is the polymerization of OH groups, a post-bonding annealing at over 200 °C is usually necessary for strong bonding. Recently, surface activated bonding (SAB) has been developed to bond inorganic materials at room temperature. [19-21] In its standard process, the bonding surfaces are treated with This paper presents a room temperature bonding technique of glass substrates with a transparent bonding interface. As a room temperature bonding method, surface activated bonding (SAB) is applied for the bonding of glass using Si intermediate layer. However, the bonding interface is colored by the deposited Si layers, which leads to lower applicability to optical devices. In this study, a new concept of SAB is developed using aluminum oxide intermediate layer. Glass substrates are successfully bonded at room temperature via the aluminum oxide intermediate layers activated by Ar ion beam irradiation, showing a...

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Section: Introductionmentioning

confidence: 99%

Room Temperature Wafer Bonding of Glass Using Aluminum Oxide Intermediate Layer

Takeuchi

Matsumoto³

et al. 2021

Adv Materials Inter

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“…Some researches highlight the influence of nanometer-scale architecture on the extinction spectra of localized surface plasmon resonance 27 and fluorescence of silicon nanoparticles prepared by nanosecond pulsed laser. 28 The introduction of high-κ Al 2 O 3 material in low temperature wafer-level bonding for 3D integration application 29 is realized. For the famous Janus particles, studies involving 1D directional selfpropulsion modulated by AC electrical field 30 and simulation of diffusiophoresis force and the confinement effect of Janus particles with the continuum method are proposed.…”

mentioning

confidence: 99%

Preface: Micro-Nano Technology

Tang

Xie

2014

AIP Advances

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Low temperature bonding of heterogeneous materials using Al2O3 as an intermediate layer

Sahoo

Ottaviano

Zheng

et al. 2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Integration of heterogeneous materials is crucial for many nanophotonic devices. The integration is often achieved by bonding using polymer adhesives or metals. A much better and cleaner option is direct wafer bonding, but the high annealing temperatures required make it a much less attractive option. Direct wafer bonding relies on a high density of hydroxyl groups on the surfaces, which may be difficult to achieve depending on the materials. Thus, it is a challenge to design a universal wafer bonding process. However, using an intermediate layer between the bonding surfaces reduces the dependence on the bonding materials, and thus, the bonding mechanism essentially remains the same. The authors present a systematic study on the use of Al2O3 as an intermediate layer for bonding of heterogeneous materials. The ability to achieve high hydroxyl group density and well-controlled films makes atomic layer deposited Al2O3 an excellent choice for the intermediate layer. The authors have optimized the bonding process to achieve a high interface energy of 1.7 J/m2 for a low temperature annealing of 300 °C. The authors also demonstrate wafer bonding of InP to SiO2 on Si and GaAs to sapphire using the Al2O3 interlayer.

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High-κ Al2O3 material in low temperature wafer-level bonding for 3D integration application

Cited by 4 publications

References 26 publications

Room Temperature Wafer Bonding of Glass Using Aluminum Oxide Intermediate Layer

Room Temperature Wafer Bonding of Glass Using Aluminum Oxide Intermediate Layer

Preface: Micro-Nano Technology

Low temperature bonding of heterogeneous materials using Al2O3 as an intermediate layer

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