Controlled nucleation of thin microcrystalline layers for the recombination junction in a-Si stacked cells

Vaucher, N. Pellaton; Rech, Bernd; Fischer, D.; Dubail, S.; Goetz, M.; Keppner, H.; Wyrsch, Nicolas; Beneking, C.; Hadjadj, O.; Shklover, Valery; Shah, A.

doi:10.1016/s0927-0248(97)00172-4

Cited by 23 publications

(7 citation statements)

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“…On the other hand, in SHJ solar cell application, it is challenging to maintain an excellent electrical cell performance while optimizing the optical layer properties because of the substrate growth selectivity on top of the (i)a‐Si:H layer . Research and development have been devoted in studying the interface treatment to properly grow a nanocrystalline structure . In particular, hydrogen plasma treatment (HPT) is widely studied for improving the c‐Si/(i)a‐Si:H chemical interface‐passivation quality .…”

Section: Introductionmentioning

confidence: 99%

Doped hydrogenated nanocrystalline silicon oxide layers for high‐efficiency c‐Si heterojunction solar cells

Zhao

Mazzarella

Procel

et al. 2020

Progress in Photovoltaics

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Hydrogenated nanocrystalline silicon oxide (nc‐SiOx:H) layers exhibit promising optoelectrical properties for carrier‐selective‐contacts in silicon heterojunction (SHJ) solar cells. However, achieving high conductivity while preserving crystalline silicon (c‐Si) passivation quality is technologically challenging for growing thin layers (less than 20 nm) on the intrinsic hydrogenated amorphous silicon ((i)a‐Si:H) layer. Here, we present an evaluation of different strategies to improve optoelectrical parameters of SHJ contact stacks founded on highly transparent nc‐SiOx:H layers. Using plasma‐enhanced chemical vapor deposition, we firstly investigate the evolution of optoelectrical parameters by varying the main deposition conditions to achieve layers with refractive index below 2.2 and dark conductivity above 1.00 S/cm. Afterwards, we assess the electrical properties with the application of different surface treatments before and after doped layer deposition. Noticeably, we drastically improve the dark conductivity from 0.79 to 2.03 S/cm and 0.02 to 0.07 S/cm for n‐ and p‐contact, respectively. We observe that interface treatments after (i)a‐Si:H deposition not only induce prompt nucleation of nanocrystals but also improve c‐Si passivation quality. Accordingly, we demonstrate fill factor improvement of 13.5%abs from 65.6% to 79.1% in front/back‐contacted solar cells. We achieve conversion efficiency of 21.8% and 22.0% for front and rear junction configurations, respectively. The optical effectiveness of contact stacks based on nc‐SiOx:H is demonstrated by averagely 1.5 mA/cm2 higher short‐circuit current density thus nearly 1%abs higher cell efficiency as compared with the (n)a‐Si:H.

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Section: Introductionmentioning

confidence: 99%

Doped hydrogenated nanocrystalline silicon oxide layers for high‐efficiency c‐Si heterojunction solar cells

Zhao

Mazzarella

Procel

et al. 2020

Progress in Photovoltaics

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“…The intrinsic layer thickness of the a‐Si:H single‐junction solar cell (140 nm) was optimized to allow the current matching of the component cells in the triple‐junction solar cell and to limit light‐induced degradation . The n‐a‐Si:H/n‐µc‐Si:H double‐layer structure was adopted for the interconnection with the middle a‐SiGe:H component cell .…”

Section: Resultsmentioning

confidence: 99%

High efficiency triple junction thin film silicon solar cells with optimized electrical structure

Liu

Bai

Chen

et al. 2014

Progress in Photovoltaics

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“…2). Microcrystalline phase should be controlled not to impact the tandem's Voc [22], [23]. The hump around 4 eV in curve is characteristic of the silicon microcrystallites [24] and confirmed the microcrystalline phase of the developed layers.…”

Section:  Materials Characterizationmentioning

confidence: 97%

Microcrystalline Silicon Tunnel Junction for Monolithic Tandem Solar Cells Using Silicon Heterojunction Technology

Puaud

Ozanne

Senaud

et al. 2021

IEEE J. Photovoltaics

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In this study, we developed a microcrystalline silicon tunnel junction to be used as a tunnel recombination junction between a large-gap top-cell and a silicon heterojunction bottomcell, in a monolithic tandem integration. This junction is composed of a p-type layer on the top of an n-type layer, deposited by plasma-enhanced chemical vapor deposition at low temperature (200°C). Microcrystalline phase percentage was controlled with Raman spectroscopy and ellipsometry measurements. The total stack has a thickness of 40 nm and an average conductivity around 10 S/cm. Minority carrier lifetime measurements showed an improvement of the field effect and the passivation with the addition of this junction on top of silicon heterojunction solar cells. Moreover, implementation of microcrystalline layer on top of reference rear emitter silicon heterojunction solar cells improved the fill factor and did not induce parasitic absorption above 700 nm. Simple tests structures were fabricated in order to characterize the tunnel junction and optimize it. Then, we carried out dark temperature-dependent I-V measurements on those test structures and observed peaks and valleys, characteristic of the junction tunnel behavior. The developed tunnel junction shows low contact resistivity and activation energies these are promising results for the complete integration on the tandem device.

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Controlled nucleation of thin microcrystalline layers for the recombination junction in a-Si stacked cells

Cited by 23 publications

References 0 publications

Doped hydrogenated nanocrystalline silicon oxide layers for high‐efficiency c‐Si heterojunction solar cells

Doped hydrogenated nanocrystalline silicon oxide layers for high‐efficiency c‐Si heterojunction solar cells

High efficiency triple junction thin film silicon solar cells with optimized electrical structure

Microcrystalline Silicon Tunnel Junction for Monolithic Tandem Solar Cells Using Silicon Heterojunction Technology

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